Unambiguous Electrical Detection of Spin-Charge Conversion in Lateral Spin-Valves

Stuart A. Cavill,Chunli Huang,Manuel Offidani,Yu-Hsuan Lin,Miguel A. Cazalilla,Aires Ferreira
DOI: https://doi.org/10.1103/PhysRevLett.124.236803
2020-03-12
Abstract:Efficient detection of spin-charge conversion is crucial for advancing our understanding of emergent phenomena in spin-orbit-coupled nanostructures. Here, we provide proof of principle of an electrical detection scheme of spin-charge conversion that enables full disentanglement of competing spin-orbit coupling transport phenomena in diffusive lateral channels i.e. the inverse spin Hall effect (ISHE) and the spin galvanic effect (SGE). A suitable detection geometry in an applied oblique magnetic field is shown to provide direct access to spin-charge transport coefficients through a simple symmetry analysis of the output non-local resistance. The scheme is robust against tilting of the spin-injector magnetization, disorder and spurious non-spin related contributions to the non-local signal, and can be used to probe spin-charge conversion effects in both spin-valve and hybrid optospintronic devices.
Mesoscale and Nanoscale Physics
What problem does this paper attempt to address?
The problem that this paper attempts to solve is: in the field of spintronics, how to achieve unambiguous electrical detection of spin - charge conversion effects (such as the inverse spin Hall effect (ISHE) and the spin - thermoelectric effect (SGE)). Specifically, the author proposes a new measurement scheme that can clearly distinguish and quantify these two competing spin - orbit - coupled transport phenomena, ISHE and SGE, in a lateral spin - valve device by applying a tilted magnetic field. ### Key issues: 1. **Limitations of existing methods**: Current methods (such as the H - bar scheme) rely on a two - step process to detect spin - charge conversion, which results in a quadratic dependence of the signal and noise sensitivity, making it difficult to accurately determine the spin Hall angle \( \theta_{\text{SHE}} \) and the SGE efficiency \( \theta_{\text{SGE}} \). 2. **Requirement for new material systems**: As research delves into material systems with broken inversion symmetry (such as two - dimensional electron gases, metal - semiconductor interfaces, etc.), it is necessary to develop efficient detection methods suitable for these systems. 3. **Challenges in experimental verification**: In actual experiments, how to design a detection geometry that can effectively separate the contributions of ISHE and SGE and ensure its robustness to deal with problems such as magnetization direction tilting, disorder, and non - spin - related signal interference. ### Solutions: The author proposes a linear filtering protocol. By analyzing the change in non - local resistance with an applied tilted magnetic field, the conversion coefficients of ISHE and SGE can be directly obtained. This method is not only applicable to traditional spin - valve devices but can also be extended to hybrid opto - spintronic devices. In addition, this scheme also takes into account the case of optical spin injection and uses the Hanle technique for detection. ### Main contributions: - Proposes a new measurement scheme that can unambiguously detect ISHE and SGE in lateral spin - valve devices. - Through theoretical models and experimental feasibility analysis, proves the effectiveness and robustness of this scheme. - Generalizes the understanding of spin - charge conversion effects in different material systems, providing a powerful tool for future research. Formula summary: - Expression for the non - local resistance difference: \[ \Delta R_{\text{nl}}=\frac{1}{2}[\Delta R_{\text{nl}}(B)\pm\Delta R_{\text{nl}}(B^{*})] \] where \( B^{*}=(B_{x}, 0, - B_{z}) \) is the mirror image of the magnetic field \( B \). - Bloch equation for spin density distribution: \[ \bar{D}\cdot\mathbf{s}(x)+\gamma(\mathbf{s}(x)\times\mathbf{B}) = 0 \] where \( \bar{D} \) is the diffusion matrix, including standard Fick terms and non - diffusion terms. - Expression for non - local voltage: \[ V_{\text{nl}}(x)=-\frac{\bar{W}D_{s}}{\sigma_{2D}}\left[l^{- 1}_{\text{SGE}}s_{x}(x)+\theta_{\text{SHE}}\partial_{x}s_{z}(x)\right]+O \] Through these formulas, the author shows how to extract spin - charge conversion parameters from experimental data and ensure the accuracy and reliability of the results.