Abstract:As nanoelectronics approaches the nanometer scale, a massive effort is underway to identify the next scalable logic technology beyond Complementary Metal Oxide Semiconductor (CMOS) computing. Such computing technology needs to improve switching energy & delay at reduced dimensions, allow improved interconnects and provide a complete logic/memory family. However, a viable beyond-CMOS logic technology has remained elusive. Here, we propose a scalable spintronic logic device which operates via spin-orbit transduction combined with magneto-electric switching. The proposed Magneto-Electric Spin Orbit (MESO) logic enables a new paradigm to continue scaling of logic performance to near thermodynamic limits for GHz logic (100 kT switching energy at 100 ps delay). The proposed MESO devices scale strongly and favorably with critical dimensions of the device, showing a cubic dependence of switching energy on size, (E_m proportional to W^3), and square dependence on voltage (E_m proportional to V^2). The excellent scaling is obtained thanks to the properties of the spin orbit effects (e.g. Inverse Spin Hall Effect (ISHE) and Inverse Rashba-Edelstein Effect (IREE)) and the dependence of capacitance on size. The operating voltages for these devices are predicted to be < 100 mV allowing a significant jump ahead of historic trends of scaling voltage with size and corresponding reduction of energy. Interconnect resistance is a critical obstacle for scaling beyond 10 nm dimensions. We project a less detrimental impact of interconnect resistance and show that MESO logic is amenable for highly resistive interconnects (100 <a class="link-external link-http" href="http://uOhm.cm" rel="external noopener nofollow">this http URL</a>-1 <a class="link-external link-http" href="http://mOhm.cm" rel="external noopener nofollow">this http URL</a>) which opens a possibility to use nano-metallic (width < bulk electron mean free path) or doped semiconducting wires (width<5 nm). A scalable, CMOS compatible, non-volatile logic family proposed here may enable the next multi-generational scaling of computing devices.

All-electrical detection of the spin-charge conversion in nanodevices based on SrTiO3 two-dimensional electron gases

Giant Charge-to-Spin Conversion Efficiency in SrTiO3-Based Electron Gas Interface

Non-volatile electric control of spin-orbit torques in an oxide two-dimensional electron gas

Non-volatile electric control of spin–charge conversion in a SrTiO3 Rashba system

Elastic and Inelastic Spin Transport in SrTiO3‐based Magnetic Heterostructure

Spin-Orbit Logic with Magnetoelectric Nodes: A Scalable Charge Mediated Nonvolatile Spintronic Logic

Spin Current Enhancement Using Double-Ferromagnetic-Layer Structure for Magnetoelectric Spin-Orbit Logic Device

Voltage-based magnetization switching and reading in magnetoelectric spin-orbit nanodevices

Gate-voltage switching of non-reciprocal transport in oxide-based Rashba interfaces

Fermi-Level-Dependent Charge-to-Spin Conversion of the Two-Dimensional Electron Gas at the γ - Interface

Non-volatile Fermi level tuning for the control of spin-charge conversion at room temperature

Emergence of large spin-charge interconversion at an oxidized Cu/W interface

Unambiguous Electrical Detection of Spin-Charge Conversion in Lateral Spin-Valves

Fermi-Level-Dependent Charge-to-Spin Conversion of the Two-Dimensional Electron Gas at the Γ - Al2O3/KTaO3 Interface

Electrical Detection of Spin Transport in Si Two-Dimensional Electron Gas Systems

Efficient Magnon Injection and Detection via the Orbital Rashba Edelstein Effect

Electrically Tunable, Rapid Spin-Orbit Torque Induced Modulation of Colossal Magnetoresistance in Mn_3Si_2Te_6 Nanoflakes

Spin to charge conversion in MoS$_{2}$ monolayer with spin pumping

Efficient Magnon Injection and Detection via the Orbital Rashba-Edelstein Effect

Electrically tunable, rapid spin-orbit torque induced modulation of colossal magnetoresistance in Mn$_3$Si$_2$Te$_6$ nanoflakes