Abstract:We have experimentally and theoretically investigated the spin injection/detection polarization in a Si-based ferromagnetic tunnel junction with an amorphous MgO layer, and demonstrated that the experimental features of the spin polarization in a wide bias range can be well explained using our theoretical model based on the band diagram of the junction and the direct tunneling mechanism. It is shown that the spin polarization originates from the band diagrams of the ferromagnetic Fe layer and n+-Si channel in the junction, while the spin selectivity of the MgO tunnel barrier is not necessary. Besides, we clarified the mechanism of the reduction in spin polarization when the bias is high and nonlinear properties are prominent, where the widely-used spin injection/detection model proposed by Valet and Fert is not applicable. The dominant mechanism of such reduction is found to be spin accumulation saturation (SAS) at the n+-Si interface in contact with the MgO layer as the bias is increased in the spin extraction geometry, which is inevitable in semiconductor-based ferromagnetic tunnel junctions. We performed numerical calculations on a two-terminal spin transport device with a n+-Si channel using the junction properties extracted from the experiments, and revealed that the magnetoresistance (MR) ratio is suppressed mainly by SAS in a higher bias range. Furthermore, we proposed methods for improving the MR ratio in two-terminal spin transport devices. Our experiments and theoretical model provide a deep understanding of the spin injection/detection phenomena in semiconductor-based spin transport devices, toward the realization of high performance under reasonably high bias conditions for practical use.

Room-temperature detection of spin accumulation in silicon across Schottky tunnel barriers using a MOSFET structure

Spin accumulation detection of FMR driven spin pumping in silicon-based metal-oxide-semiconductor heterostructures

Efficient Spin Injection into Silicon and the Role of the Schottky Barrier

Spin injection and detection in a Si-based ferromagnetic tunnel junction: A theoretical model based on the band diagram and experimental demonstration

Electrical Spin Injection into Silicon using MgO Tunnel Barrier

Investigation of gating effect in Si spin MOSFET

Room Temperature Electron Tunneling and Storage in a Nanocrystalline Silicon Floating Gate Structure

Electrical Detection of Spin Transport in Si Two-Dimensional Electron Gas Systems

Gate-tunable spin exclusive or operation in a silicon-based spin device at room temperature

Efficient nonlinear room-temperature spin injection from ferromagnets into semiconductors through a modified Schottky barrier

Non-ohmic Spin Transport in N-Type Doped Silicon

Observation of Coulomb-blockade in a field-effect transistor with silicon nanocrystal floating gate at room temperature

Observation of large spin accumulation voltages in non-degenerate Si spin devices due to spin drift effect: Experiments and theory

Temperature Evolution of Spin-Polarized Electron Tunneling in Silicon Nanowire–Permalloy Lateral Spin Valve System

Observation of room temperature gate tunable quantum confinement effect in photodoped junctionless MOSFET

Demonstration of efficient spin injection and detection into p-Si using NiFe2O4 based spin injector in NiFe2O4/MgO/p-Si device

Quantitative and systematic analysis of bias dependence of spin accumulation voltage in a non-degenerate Si spin valve

Room-temperature spin injection and spin-to-charge conversion in a ferromagnetic semiconductor / topological insulator heterostructure

Reverse Schottky-asymmetry spin current detectors

Hanle-Effect Measurements of Spin Injection from Mn5ge3c0.8/Al2o3-Contacts into Degenerately Doped Ge Channels on Si

Room-temperature coherent control of implanted defect spins in silicon carbide