Abstract:We have experimentally and theoretically investigated the spin injection/detection polarization in a Si-based ferromagnetic tunnel junction with an amorphous MgO layer, and demonstrated that the experimental features of the spin polarization in a wide bias range can be well explained using our theoretical model based on the band diagram of the junction and the direct tunneling mechanism. It is shown that the spin polarization originates from the band diagrams of the ferromagnetic Fe layer and n+-Si channel in the junction, while the spin selectivity of the MgO tunnel barrier is not necessary. Besides, we clarified the mechanism of the reduction in spin polarization when the bias is high and nonlinear properties are prominent, where the widely-used spin injection/detection model proposed by Valet and Fert is not applicable. The dominant mechanism of such reduction is found to be spin accumulation saturation (SAS) at the n+-Si interface in contact with the MgO layer as the bias is increased in the spin extraction geometry, which is inevitable in semiconductor-based ferromagnetic tunnel junctions. We performed numerical calculations on a two-terminal spin transport device with a n+-Si channel using the junction properties extracted from the experiments, and revealed that the magnetoresistance (MR) ratio is suppressed mainly by SAS in a higher bias range. Furthermore, we proposed methods for improving the MR ratio in two-terminal spin transport devices. Our experiments and theoretical model provide a deep understanding of the spin injection/detection phenomena in semiconductor-based spin transport devices, toward the realization of high performance under reasonably high bias conditions for practical use.

Electrical Spin Injection into Silicon using MgO Tunnel Barrier

Local magnetoresistance in Fe/MgO/Si lateral spin valve at room temperature

Room-temperature detection of spin accumulation in silicon across Schottky tunnel barriers using a MOSFET structure

Spin injection and detection in a Si-based ferromagnetic tunnel junction: A theoretical model based on the band diagram and experimental demonstration

Demonstration of efficient spin injection and detection into p-Si using NiFe2O4 based spin injector in NiFe2O4/MgO/p-Si device

Lateral spin injection and detection through electrodeposited Fe/GaAs contacts

Electrical spin injection and detection in a semiconductor. Is it feasible?

35% magnetocurrent with spin transport through Si

Generation and detection of dissipationless spin current in MgO/Si bilayer

Efficient Spin Injection into Silicon and the Role of the Schottky Barrier

Towards spin injection from silicon into topological insulators: Schottky barrier between Si and Bi2Se3

Temperature Evolution of Spin-Polarized Electron Tunneling in Silicon Nanowire–Permalloy Lateral Spin Valve System

Experimental realization of a silicon spin field-effect transistor

Effective Nonlocal Spin Injection Through Low-Resistance Oxide Junctions

Tunneling Spin Injection into Single Layer Graphene.

Spin accumulation detection of FMR driven spin pumping in silicon-based metal-oxide-semiconductor heterostructures

Lateral Spin Injection in Germanium Nanowires

Electrical Detection of Spin Transport in Si Two-Dimensional Electron Gas Systems

Spin injection through energy-band symmetry matching with high spin polarization in atomically controlled ferromagnet/ferromagnet/semiconductor structures

Thermal spin injection and interface insensitivity in permalloy/aluminum metallic non-local spin valves

Demonstration Of Spin Valve Effects In Silicon Nanowires