Abstract:The injection of a spin-polarized current into a semiconductor, one of the key requirements for spintronics, poses the challenge for computational materials science to possibly screen suitable materials. In a number of theoretical investigations, we have put forward magnetic intermetallic compounds grown epitaxially on Si as promising candidates. We employed density functional theory calculations with the GGA-PBE exchange-correlation functional and the full-potential augmented plane wave plus local orbital (FP-APW+lo) method, as implemented in the WIEN2k package. In the spirit of computational materials science, we investigated the stability and magnetic properties of thin films of the Heusler alloy Co2MnSi, as well as of binary late transition metal monosilicides, in contact with the Si surface. For the Heusler alloy Co2MnSi, we could show that the (001) surface retains the half-metallic character of the bulk if a fully Mn-terminated surface is prepared. At interfaces with Si, a finite density of states at the Fermi energy was found for both spin channels, but the half-metallic behavior recovers only a few layers away from the interface. For the monosilicides of the late 3d-transition metals (Mn, Fe, Co, Ni), we predict a CsCl-like structure that has not yet been observed as bulk compound but may be stabilized epitaxially on Si(001). For very thin films of CoSi and MnSi grown in this structure, our calculations find a ferromagnetic ground state. Recently, we identified the atomic structure of MnSi films on Si(111) which is close to the natural crystal structure of bulk MnSi (B20), and also shows large magnetic moments of the Mn atoms at the surface and interface. All MnSi films have a high degree of spin polarization (between 30% and 50%, depending on film thickness) at the Fermi level, and are thus promising materials for fabricating electrical contacts for spin injection into Si.

35% magnetocurrent with spin transport through Si

Experimental realization of a silicon spin field-effect transistor

Spin Injection from Ferromagnetic Metal Directly into Non-Magnetic Semiconductor under Different Injection Currents

Efficient Spin Injection into Silicon and the Role of the Schottky Barrier

Spin injection and detection in a Si-based ferromagnetic tunnel junction: A theoretical model based on the band diagram and experimental demonstration

Demonstration of efficient spin injection and detection into p-Si using NiFe2O4 based spin injector in NiFe2O4/MgO/p-Si device

Spin Injection into Semiconductors Driven by A Spin Battery

Injection of Spin Polarization into Si from the Heterostructure Lamno3/Si Interface

A Spin Injector

Efficient nonlinear room-temperature spin injection from ferromagnets into semiconductors through a modified Schottky barrier

Nanoelectromechanical Spin Injector with Large Current Signal at Room Temperature

Spin diffusion and injection in semiconductor structures: Electric field effects

Spin injection through energy-band symmetry matching with high spin polarization in atomically controlled ferromagnet/ferromagnet/semiconductor structures

Electrical Spin Injection into Silicon using MgO Tunnel Barrier

Can a Non-Ideal Metal Ferromagnet Inject Spin Into a Semiconductor With 100% Efficiency Without a Tunnel Barrier?

Transition-Metal Silicides As Materials for Magnet-Semiconductor Heterostructures

LOW-FIELD INHOMOGENEITY-INDUCED MAGNETORESISTANCE IN SILICON

Harnessing the magnetic proximity effect: induced spin polarization in Ni/Si interfaces

Large and Robust Electrical Spin Injection into GaAs at Zero Magnetic Field Using an Ultrathin CoFeB/MgO Injector

Electrical spin injection and detection in a semiconductor. Is it feasible?

Injection of spin-polarized carriers in ferromagnet/superconductor tunnel junctions