Abstract:We have experimentally and theoretically investigated the spin injection/detection polarization in a Si-based ferromagnetic tunnel junction with an amorphous MgO layer, and demonstrated that the experimental features of the spin polarization in a wide bias range can be well explained using our theoretical model based on the band diagram of the junction and the direct tunneling mechanism. It is shown that the spin polarization originates from the band diagrams of the ferromagnetic Fe layer and n+-Si channel in the junction, while the spin selectivity of the MgO tunnel barrier is not necessary. Besides, we clarified the mechanism of the reduction in spin polarization when the bias is high and nonlinear properties are prominent, where the widely-used spin injection/detection model proposed by Valet and Fert is not applicable. The dominant mechanism of such reduction is found to be spin accumulation saturation (SAS) at the n+-Si interface in contact with the MgO layer as the bias is increased in the spin extraction geometry, which is inevitable in semiconductor-based ferromagnetic tunnel junctions. We performed numerical calculations on a two-terminal spin transport device with a n+-Si channel using the junction properties extracted from the experiments, and revealed that the magnetoresistance (MR) ratio is suppressed mainly by SAS in a higher bias range. Furthermore, we proposed methods for improving the MR ratio in two-terminal spin transport devices. Our experiments and theoretical model provide a deep understanding of the spin injection/detection phenomena in semiconductor-based spin transport devices, toward the realization of high performance under reasonably high bias conditions for practical use.

Demonstration of efficient spin injection and detection into p-Si using NiFe2O4 based spin injector in NiFe2O4/MgO/p-Si device

Spin injection and detection in a Si-based ferromagnetic tunnel junction: A theoretical model based on the band diagram and experimental demonstration

Electrical spin injection and detection in a semiconductor. Is it feasible?

Efficient Spin Injection into Silicon and the Role of the Schottky Barrier

Harnessing the magnetic proximity effect: induced spin polarization in Ni/Si interfaces

Room-temperature spin injection and spin-to-charge conversion in a ferromagnetic semiconductor / topological insulator heterostructure

Lateral spin injection and detection through electrodeposited Fe/GaAs contacts

Spin mediated magneto-electro-thermal transport behavior in Ni80Fe20/MgO/p-Si thin films

35% magnetocurrent with spin transport through Si

Electrical Spin Injection into Silicon using MgO Tunnel Barrier

Large and Robust Electrical Spin Injection into GaAs at Zero Magnetic Field Using an Ultrathin CoFeB/MgO Injector

Ultrafast and Gigantic Spin Injection in Semiconductors

Spin accumulation detection of FMR driven spin pumping in silicon-based metal-oxide-semiconductor heterostructures

Spin-Hall effect and emergent antiferromagnetic phase transition in n-Si

Doping dependent intrinsic magnetization in silicon in Ni/Si heterostructures

Generation and detection of dissipationless spin current in MgO/Si bilayer

Room temperature spin injection study across semi-crystalline PVDF-HFP thin films in PVDF-HFP/NiFe bilayers and Ag/(NiFe or Co)/PVDF-HFP/NiFe spin valves

Magnon mediated spin pumping by coupled ferrimagnetic garnets heterostructure

Electrical spin injection and detection in lateral all-semiconductor devices

Non-ohmic Spin Transport in N-Type Doped Silicon

Spin mediated enhanced negative magnetoresistance in Ni80Fe20 and p-silicon bilayer