Spin mediated magneto-electro-thermal transport behavior in Ni80Fe20/MgO/p-Si thin films

P. C. Lou,W. P. Beyermann,S. Kumar

DOI: https://doi.org/10.1063/1.5004129

2017-09-06

Abstract:In Si, spin-phonon interaction is the primary spin relaxation mechanism. At low temperatures, the absence of spin-phonon relaxation will lead to enhanced spin accumulation. Spin accumulation may change the electro-thermal transport within the material, and thus may serve as an investigative tool for characterizing spin-mediated behavior. Here we present the first experimental proof of spin accumulation induced electro-thermal transport behavior in a Pd (1 nm)/Ni80Fe20 (25 nm)/MgO (1 nm)/p-Si (2 um) specimen. The spin accumulation originates from the spin-Hall effect. The spin accumulation changes the phononic thermal transport in p-Si causing the observed magneto-electro-thermal transport behavior. We also observe the inverted switching behavior in magnetoresistance measurement at low temperatures in contrast to magnetic characterization, which is attributed to the canted spin states in p-Si due to spin accumulation. The spin accumulation is elucidated by current dependent anomalous Hall resistance measurement, which shows a decrease as the electric current is increased. This result may open a new paradigm in the field of spin-mediated transport behavior in semiconductor and semiconductor spintronics.

Mesoscale and Nanoscale Physics,Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to explore the changes in electro - thermo - magnetic transport behavior caused by spin accumulation in Ni80Fe20/MgO/p - Si thin films under low - temperature conditions. Specifically, the researchers focus on how spin - phonon interactions affect the electro - thermo - transport properties in p - Si and discuss whether such changes can be used as a tool to characterize spin - mediated behavior.

### Main problem summary:

1. **Influence of spin accumulation**:
- At low temperatures, the weakening of spin - phonon interactions leads to an enhancement of non - equilibrium spin accumulation. Will this spin accumulation change the electro - thermo - transport behavior inside the material?

2. **Role of the spin Hall effect**:
- Spin accumulation originates from the Spin Hall Effect (SHE). What specific impact does it have on heat transport in p - Si?

3. **Mechanism of inverted switching behavior**:
- What causes the inverted switching behavior observed in magnetoresistance measurements at low temperatures? What is the relationship between this and the existence of spin accumulation and coherent spin states?

4. **Experimental verification**:
- Verify the above hypotheses through experimental means (such as the 3ω method, magnetoresistance measurements, etc.) and explain the observed phenomena.

### Formula explanation:

The formulas involved in the paper are mainly used to describe the heat conduction equation and the calculation of thermal conductivity:

\[
\rho C_p \frac{\partial T(x,t)}{\partial t} = \kappa \frac{\partial^2 T(x,t)}{\partial x^2} + I_0^2 R_0 + R_9 \theta(x,t)
\]

where:
- \(\rho\) is the density of the material
- \(C_p\) is the specific heat capacity
- \(\kappa\) is the thermal conductivity
- \(R_0\) is the initial resistance
- \(R_9\) is the temperature derivative of the resistance
- \(\theta(x,t)=T(x,t) - T_0\) is the temperature change

The thermal conductivity can be expressed in terms of the third - harmonic voltage \(V_{3\omega}\) as:

\[
\kappa \approx \frac{L}{S} \frac{V_{3\omega}}{I_0^2}
\]

These formulas help the researchers understand and quantify the electro - thermo - transport behavior observed in the experiment.

### Conclusion:

This study reveals the important influence of spin accumulation on the electro - thermo - transport behavior in p - Si at low temperatures, especially the change in thermal conductivity through spin - phonon interactions. In addition, the study also discovers the inverted switching behavior and proposes that the coherent spin state caused by spin accumulation may be the reason behind it. This finding provides a new research direction in the field of semiconductor spintronics.