Spin injection and detection in a Si-based ferromagnetic tunnel junction: A theoretical model based on the band diagram and experimental demonstration

Baisen Yu,Shoichi Sato,Masaaki Tanaka,Ryosho Nakane

2024-03-21

Abstract:We have experimentally and theoretically investigated the spin injection/detection polarization in a Si-based ferromagnetic tunnel junction with an amorphous MgO layer, and demonstrated that the experimental features of the spin polarization in a wide bias range can be well explained using our theoretical model based on the band diagram of the junction and the direct tunneling mechanism. It is shown that the spin polarization originates from the band diagrams of the ferromagnetic Fe layer and n+-Si channel in the junction, while the spin selectivity of the MgO tunnel barrier is not necessary. Besides, we clarified the mechanism of the reduction in spin polarization when the bias is high and nonlinear properties are prominent, where the widely-used spin injection/detection model proposed by Valet and Fert is not applicable. The dominant mechanism of such reduction is found to be spin accumulation saturation (SAS) at the n+-Si interface in contact with the MgO layer as the bias is increased in the spin extraction geometry, which is inevitable in semiconductor-based ferromagnetic tunnel junctions. We performed numerical calculations on a two-terminal spin transport device with a n+-Si channel using the junction properties extracted from the experiments, and revealed that the magnetoresistance (MR) ratio is suppressed mainly by SAS in a higher bias range. Furthermore, we proposed methods for improving the MR ratio in two-terminal spin transport devices. Our experiments and theoretical model provide a deep understanding of the spin injection/detection phenomena in semiconductor-based spin transport devices, toward the realization of high performance under reasonably high bias conditions for practical use.

Applied Physics

What problem does this paper attempt to address?

The problems that this paper attempts to solve mainly focus on the following aspects:

1. **Understanding the spin - injection and - detection mechanisms in silicon - based ferromagnetic tunnel junctions**:
- Through experimental and theoretical research, the paper studied the spin - polarized injection and detection characteristics in silicon - based ferromagnetic tunnel junctions, especially in structures containing amorphous MgO layers. The author proposed a theoretical model based on the energy - band diagram and verified the effectiveness of this model through experiments.

2. **Explaining the phenomenon of spin - polarization reduction under high - bias voltages**:
- It was found that under high - bias - voltage conditions, spin - polarization will be significantly reduced. The traditional Valet and Fert model (V - F model) is no longer applicable in this case. By introducing the concept of "Spin Accumulation Saturation" (SAS), the author explained this phenomenon. Specifically, when the bias voltage increases, the spin accumulation at the n+-Si interface reaches a saturated state, resulting in a sharp drop in the spin current.

3. **Improving the magnetoresistance ratio (MR ratio) of two - terminal spin - transport devices**:
- Through numerical calculations, the author studied the magnetoresistance ratio (MR ratio) of two - terminal spin - transport devices under high - bias - voltage conditions. The results show that SAS is the main reason for the decrease in the MR ratio in the high - bias - voltage range. Based on these findings, the author proposed several improvement methods to increase the MR ratio, thereby achieving high - performance spin - transport devices.

4. **Providing an in - depth understanding of semiconductor - based spin - transport devices**:
- Through experimental and theoretical research, the author provided an in - depth understanding of the spin - injection and - detection phenomena in semiconductor - based spin - transport devices, especially for devices that need to work under relatively high - bias - voltage conditions in practical applications.

### Formula Summary

- **Definitions of spin current and total current**:
\[
J_S = J_+ - J_-
\]
\[
J = J_+ + J_-
\]

- **Spin - injection polarization**:
\[
P_{\text{inj}} = \frac{J_S}{J} = \frac{J_+ - J_-}{J_+ + J_-}
\]

- **Spin accumulation**:
\[
\Delta \mu = 2 J_S r_{\text{sr}}
\]
where \( r_{\text{sr}} \) is the spin resistivity.

- **Spin - detection polarization**:
\[
P_{\text{det}} = \frac{2 \Delta V_{\text{det}}}{\Delta \mu}
\]

- **Calculation of tunneling current**:
\[
J_\pm(V, \Delta \mu(V)) = A \int D_{\text{Fe}\pm}(E) D_{\text{Si}}(E - V) T(E, V) \left[ f_{\text{Fe}}(E) - f_{\text{Si}}(E - V \pm \frac{\Delta \mu(V)}{2}) \right] dE
\]
where \( A \) is a constant, including the effective masses of electrons in iron and silicon.

Through these studies, the author not only explained the experimental phenomena but also provided theoretical guidance for designing high - performance spin - transport devices.