Abstract:SEMICONDUCTOR SPINTRONICS<a class="webref" href="https://doi.org/10.1002/adfm.202002513">Adv. Mater., 2002513 (2020) </a>Up to now, substantial work has been carried out on different materials-based diluted magnetic semiconductors, and great achievements have been made on increasing Curie temperature of these materials. However, the carrier mobility of the magnetic semiconductors is still low due to various scatterings, and rare studies have been performed to effectively enhance the carrier mobility. As we know, both high Curie-temperature ferromagnetism and high carrier mobility are important characteristics for ideal magnetic semiconductors, which are essential for spin polarized current generation and transport in real spintronic semiconducting devices.Recently, the research team led by Prof. Gang Xiang from Sichuan University, China has demonstrated a way for enhancing both ferromagnetism and carrier mobility in group-IV thin films compatible with current silicon technology. Specifically, Mn-doped SiGe thin films were first fabricated on Ge substrates by radio frequency magnetron sputtering and then crystallized by rapid thermal annealing. After annealing, the samples became ferromagnetic, in which the Curie temperature increases with increasing Mn doping concentration and reaches 280 K with 5% Mn concentration. The data suggest that the ferromagnetism comes from the hole-mediated process and is enhanced by the tensile strain in the SiGe crystals. In addition, the Hall effect measurement up to 33 T to eliminate the influence of anomalous Hall effect reveals that the hole mobility of the annealed samples is greatly enhanced and the maximal value is ~1000 cm2V–1s–1, 2 orders of magnitude bigger than other magnetic semiconductors, owing to the tensile strain-induced separation of heavy holes and light holes on the valence band top. As a result, the tensile-strained Mn-doped SiGe thin films exhibit both high Curie-temperature ferromagnetism and high hole mobility, which is one piece of few exciting news since the outbreak of COVID-19 epidemic, especially for the community of semiconductor spintronics.Jianhua Zhao (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China) doi: <a class="webref" href="https://doi.org/10.1088/1674-4926/41/8/080201">10.1088/1674-4926/41/8/080201</a>

LOW-FIELD INHOMOGENEITY-INDUCED MAGNETORESISTANCE IN SILICON

Geometrical enhancement of low-field magnetoresistance in silicon

Diode and Inhomogeneity Assisted Extremely Large Magnetoresistance in Silicon

Resistance Transition Assisted Geometry Enhanced Magnetoresistance in Semiconductors

Large Magnetoresistance in Silicon at Room Temperature Induced by Onsite Coulomb Interaction

Room-Temperature Nonsaturating Magnetoresistance Of Intrinsic Bulk Silicon In High Pulsed Magnetic Fields

Enhanced Low Field Magnetoresistance in Germanium and Silicon-Diode Combined Device at Room Temperature

Giant magnetoresistance in silicon _ _ _ Diode-assisted geometrical enhancement of magnetoresistance

Current Induced Non-Volatile Resistive Switching Effect in Silicon Devices with Large Magnetoresistance

Low-voltage Magnetoresistance in Silicon

Tunable zero-field magnetoresistance responses in Si transistors: Origins and applications

Large, Tunable Magnetoresistance in Nonmagnetic III-V Nanowires.

The space charge limited current and huge linear magnetoresistance in silicon

35% magnetocurrent with spin transport through Si

Magnetic Field Controllable Nonvolatile Resistive Switching Effect in Silicon Device

Linear magnetoresistance in commercial n-type silicon due to inhomogeneous doping

Temperature-Dependent Asymmetry of Anisotropic Magnetoresistance in Silicon p-n Junctions

Extremely Large Magnetoresistance at Low Magnetic Field by Coupling the Nonlinear Transport Effect and the Anomalous Hall Effect

Voltage-Controlled Magnetoresistance in Silicon Nanowire Transistors.

Enhanced Linear Magnetoresistance of Germanium at Room Temperature Due to Surface Imperfection

High Curie temperature ferromagnetism and high hole mobility in tensile strained Mn-doped SiGe thin films