Abstract:Magnetoresistance (MR) reported in some non-magnetic semiconductors (particularly silicon) has triggered considerable interest owing to the large magnitude of the effect. Here, we showed that MR in lightly doped n-Si can be significantly enhanced by introducing two diodes and proper design of the carrier path [Wan, Nature 477, 304 (2011)]. We designed a geometrical enhanced magnetoresistance (GEMR) device whose room-temperature MR ratio reaching 30% at 0.065 T and 20 000% at 1.2 T, respectively, approaching the performance of commercial MR devices. The mechanism of this GEMR is: the diodes help to define a high resistive state (HRS) and a low resistive state (LRS) in device by their openness and closeness, respectively. The ratio of apparent resistance between HRS and LRS is determined by geometry of silicon wafer and electrodes. Magnetic field could induce a transition from LRS to HRS by reshaping potential and current distribution among silicon wafer, resulting in a giant enhancement of intrinsic MR. We expect that this GEMR could be also realized in other semiconductors. The combination of high sensitivity to low magnetic fields and large high-field response should make this device concept attractive to the magnetic field sensing industry. Moreover, because this MR device is based on a conventional silicon/semiconductor platform, it should be possible to integrate this MR device with existing silicon/semiconductor devices and so aid the development of silicon/semiconductor-based magnetoelectronics. Also combining MR devices and semiconducting devices in a single Si/semiconductor chip may lead to some novel devices with hybrid function, such as electric-magnetic-photonic properties. Our work demonstrates that the charge property of semiconductor can be used in the magnetic sensing industry, where the spin properties of magnetic materials play a role traditionally.

Extremely Large Magnetoresistance at Low Magnetic Field by Coupling the Nonlinear Transport Effect and the Anomalous Hall Effect

Resistance Transition Assisted Geometry Enhanced Magnetoresistance in Semiconductors

Transport Properties of High-Performance All-Heusler Co2CrSi/Cu2CrAl/Co2CrSi Giant Magnetoresistance Device

Magnetic Logic Based on Diode-Assisted Magnetoresistance

Unusual magneto-transport induced by anomalous Hall effect

Enhanced Low Field Magnetoresistance in Germanium and Silicon-Diode Combined Device at Room Temperature

Diode and Inhomogeneity Assisted Extremely Large Magnetoresistance in Silicon

Giant magnetoresistance in silicon _ _ _ Diode-assisted geometrical enhancement of magnetoresistance

Magnetotransport induced by anomalous Hall effect

Silicon-Based Current-Controlled Reconfigurable Magnetoresistance Logic Combined with Non-Volatile Memory

Extremely large magnetoresistance in the "ordinary" metal ReO<sub>3</sub>

Large Magnetoresistance in Silicon at Room Temperature Induced by Onsite Coulomb Interaction

Giant magnetoresistance effect due to the tunneling between quantum anomalous Hall edge states

Nonvolatile Electric Control of the Anomalous Hall Effect in an Ultrathin Magnetic Metal

Abnormal low-field M-type magnetoresistance in hexagonal noncollinear ferromagnetic MnFeGe alloy

Anomalous Hall effect from nonlinear magnetoelectric coupling

Diode Assisted Giant Positive Magnetoresistance in N-Type Gaas at Room Temperature

Magnetoresistance Effect Realized in Current-in-plane Van Der Waals Spin Valve Structure by Electrically Switchable Magnetization

Large Linear Magnetoresistance of High‐Mobility 2D Electron System at Nonisostructural γ‐Al 2 O 3 /SrTiO 3 Heterointerfaces

Giant Nonvolatile Manipulation of Magnetoresistance in Magnetic Tunnel Junctions by Electric Fields Via Magnetoelectric Coupling

Large Magnetoresistance in Few Layer Graphene Stacks with Current Perpendicular to Plane Geometry