Abstract:Magnetoresistance (MR) reported in some non-magnetic semiconductors (particularly silicon) has triggered considerable interest owing to the large magnitude of the effect. Here, we showed that MR in lightly doped n-Si can be significantly enhanced by introducing two diodes and proper design of the carrier path [Wan, Nature 477, 304 (2011)]. We designed a geometrical enhanced magnetoresistance (GEMR) device whose room-temperature MR ratio reaching 30% at 0.065 T and 20 000% at 1.2 T, respectively, approaching the performance of commercial MR devices. The mechanism of this GEMR is: the diodes help to define a high resistive state (HRS) and a low resistive state (LRS) in device by their openness and closeness, respectively. The ratio of apparent resistance between HRS and LRS is determined by geometry of silicon wafer and electrodes. Magnetic field could induce a transition from LRS to HRS by reshaping potential and current distribution among silicon wafer, resulting in a giant enhancement of intrinsic MR. We expect that this GEMR could be also realized in other semiconductors. The combination of high sensitivity to low magnetic fields and large high-field response should make this device concept attractive to the magnetic field sensing industry. Moreover, because this MR device is based on a conventional silicon/semiconductor platform, it should be possible to integrate this MR device with existing silicon/semiconductor devices and so aid the development of silicon/semiconductor-based magnetoelectronics. Also combining MR devices and semiconducting devices in a single Si/semiconductor chip may lead to some novel devices with hybrid function, such as electric-magnetic-photonic properties. Our work demonstrates that the charge property of semiconductor can be used in the magnetic sensing industry, where the spin properties of magnetic materials play a role traditionally.

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Resistance Transition Assisted Geometry Enhanced Magnetoresistance in Semiconductors

Diode and Inhomogeneity Assisted Extremely Large Magnetoresistance in Silicon

Current Induced Non-Volatile Resistive Switching Effect in Silicon Devices with Large Magnetoresistance

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Anomalous Positive Magnetoresistance in Cox–C1−x Granular Films on Si Substrates

Bias Voltage Controlled Positive Magnetoresistance of Fe 0.05 −C 0.95 /si Heterostructures

The space charge limited current and huge linear magnetoresistance in silicon

Temperature-Dependent Asymmetry of Anisotropic Magnetoresistance in Silicon p-n Junctions

Diode Assisted Giant Positive Magnetoresistance in N-Type Gaas at Room Temperature

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Room-temperature Magnetoresistance in A-C:Co/si System

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Magnetoplasticity and diffusion in silicon single crystals