Abstract:In semiconductor spintronic devices, the semiconductor is usually lightly doped and nondegenerate, and moderate electric fields can dominate the carrier motion. We recently derived a drift-diffusion equation for spin polarization in the semiconductors by consistently taking into account electric-field effects and nondegenerate electron statistics and identified a high-field diffusive regime which has no analogue in metals. Here spin injection from a ferromagnet (FM) into a nonmagnetic semiconductor (NS) is extensively studied by applying this spin drift-diffusion equation to several typical injection structures such as FM/NS, FM/NS/FM, and FM/NS/NS structures. We find that in the high-field regime spin injection from a ferromagnet into a semiconductor is enhanced by several orders of magnitude. For injection structures with interfacial barriers, the electric field further enhances spin injection considerably. In FM/NS/FM structures high electric fields destroy the symmetry between the two magnets at low fields, where both magnets are equally important for spin injection, and spin injection becomes locally determined by the magnet from which carriers flow into the semiconductor. The field-induced spin injection enhancement should also be insensitive to the presence of a highly doped nonmagnetic semiconductor (NS$^+$) at the FM interface, thus FM/NS$^+$/NS structures should also manifest efficient spin injection at high fields. Furthermore, high fields substantially reduce the magnetoresistance observable in a recent experiment on spin injection from magnetic semiconductors.

Can a Non-Ideal Metal Ferromagnet Inject Spin Into a Semiconductor With 100% Efficiency Without a Tunnel Barrier?

Efficient nonlinear room-temperature spin injection from ferromagnets into semiconductors through a modified Schottky barrier

Spin Injection into Semiconductors Driven by A Spin Battery

Spin injection through energy-band symmetry matching with high spin polarization in atomically controlled ferromagnet/ferromagnet/semiconductor structures

Conditions for efficient spin injection from a ferromagnetic metal into a semiconductor

Spin injection from a ferromagnet into a semiconductor in the case of a rough interface

Spin diffusion and injection in semiconductor structures: Electric field effects

Complete spin extraction from semiconductors near ferromagnet-semiconductor interfaces

Electrical spin injection and detection in a semiconductor. Is it feasible?

Spin Injection from Ferromagnetic Metal Directly into Non-Magnetic Semiconductor under Different Injection Currents

Spin Injection Based on the Spin Gapless Semiconductor(sgs)/semiconductor Heterostructures

Room-temperature spin injection and spin-to-charge conversion in a ferromagnetic semiconductor / topological insulator heterostructure

Ultrafast and Gigantic Spin Injection in Semiconductors

Semiconductors between spin-polarized source and drain

Spin injection efficiency from two adjoining ferromagnetic metals into a two-dimensional electron gas

35% magnetocurrent with spin transport through Si

Spin-Polarized Electron Transport at Ferromagnet/Semiconductor Schottky Contacts

Superfluid spin transport through antiferromagnetic insulators

Calculations of the Spin-Polarization of the Electronic Current Injected from A Ferromagnetic Metal into A Semiconductor

Spin pumping from a ferromagnetic insulator into an altermagnet

A Spin Injector