Abstract:We have experimentally and theoretically investigated the spin injection/detection polarization in a Si-based ferromagnetic tunnel junction with an amorphous MgO layer, and demonstrated that the experimental features of the spin polarization in a wide bias range can be well explained using our theoretical model based on the band diagram of the junction and the direct tunneling mechanism. It is shown that the spin polarization originates from the band diagrams of the ferromagnetic Fe layer and n+-Si channel in the junction, while the spin selectivity of the MgO tunnel barrier is not necessary. Besides, we clarified the mechanism of the reduction in spin polarization when the bias is high and nonlinear properties are prominent, where the widely-used spin injection/detection model proposed by Valet and Fert is not applicable. The dominant mechanism of such reduction is found to be spin accumulation saturation (SAS) at the n+-Si interface in contact with the MgO layer as the bias is increased in the spin extraction geometry, which is inevitable in semiconductor-based ferromagnetic tunnel junctions. We performed numerical calculations on a two-terminal spin transport device with a n+-Si channel using the junction properties extracted from the experiments, and revealed that the magnetoresistance (MR) ratio is suppressed mainly by SAS in a higher bias range. Furthermore, we proposed methods for improving the MR ratio in two-terminal spin transport devices. Our experiments and theoretical model provide a deep understanding of the spin injection/detection phenomena in semiconductor-based spin transport devices, toward the realization of high performance under reasonably high bias conditions for practical use.

Local magnetoresistance in Fe/MgO/Si lateral spin valve at room temperature

Magneto-Transport Studies of Fe/Alq(3)/Co Organic Spin-Valves

Tunable Asymmetric Magnetoresistance in an Fe3GeTe2/graphite/Fe3GeTe2 Lateral Spin Valve.

Electrical Spin Injection into Silicon using MgO Tunnel Barrier

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Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions

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Fe3GaTe2/MoSe2 Ferromagnet/Semiconductor 2D van der Waals Heterojunction for Room-Temperature Spin-Valve Devices

Room temperature magneto-optic effect in silicon light-emitting diodes

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Giant Magnetoresistance Enhancement at Room-Temperature in Organic Spin Valves Based on La0.67Sr0.33MnO3 Electrodes

Temperature Evolution of Spin-Polarized Electron Tunneling in Silicon Nanowire–Permalloy Lateral Spin Valve System

Large Voltage Control of Magnetic Anisotropy in CoFeB/MgO/OX Structures at Room Temperature

Room-temperature detection of spin accumulation in silicon across Schottky tunnel barriers using a MOSFET structure