Abstract:A scheme is proposed to electrically measure the spin-momentum coupling in the topological insulator surface state by injection of spin polarized electrons from silicon. As a first approach, devices were fabricated consisting of thin (<100nm) exfoliated crystals of Bi2Se3 on n-type silicon with independent electrical contacts to silicon and Bi2Se3. Analysis of the temperature dependence of thermionic emission in reverse bias indicates a barrier height of 0.34 eV at the Si-Bi2Se3 interface. This robust Schottky barrier opens the possibility of novel device designs based on sub-band gap internal photoemission from Bi2Se3 into Si.

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is **how to measure the spin - momentum coupling in the surface states of topological insulators (TI) by electrical methods**. Specifically, the author proposes an experimental scheme to verify the spin - momentum locking characteristics of the topological insulator surface states by injecting spin - polarized electrons from silicon. ### Background and Challenges 1. **Unique Properties of Topological Insulators**: - The most prominent feature of three - dimensional strong topological insulators (3D TI) is their metallic surface states within the bulk band gap, and these surface states have perfect spin - momentum coupling. - Spin - momentum coupling makes these surface states potentially valuable in quantum computing and spintronics. 2. **Limitations of Existing Measurement Methods**: - Although spin - angle - resolved photoemission spectroscopy (spin - ARPES) has measured the spin helicity on the TI surface, there is no clear experimental evidence of electrical transport yet. - Due to the complete coupling of spin and momentum, non - local spin current measurements cannot be carried out. - Spin precession caused by the magnetic field is eliminated by momentum scattering in the diffusion region, making it difficult for traditional spin - transport measurement methods to distinguish signals. - Direct injection of spin from ferromagnetic contacts is also affected by the ordinary Hall effect, making it difficult to distinguish signals. ### Proposed Solutions To solve the above problems, the author proposes an innovative experimental scheme: 1. **Experimental Design**: - Use a long - distance silicon transmission channel as a spin source to avoid the stray magnetic field and magnetoresistive effects brought by direct contact with ferromagnetic materials. - Achieve controllable spin precession in silicon so that the spin direction can be controlled when reaching the TI interface. - Confirm the existence of spin - momentum coupling by detecting the spin - Hall effect on the TI surface. 2. **Key Technical Points**: - **Schottky Barrier Height**: The Schottky barrier height between Si and Bi₂Se₃ is measured to be 0.34 eV, which determines the initial state of the injected electrons. - **Spin - Polarized Injection**: Non - polarized hot electrons are injected into the ferromagnetic anode through a tunnel junction, and the minority - spin electrons are selectively decayed, thus achieving a spin - polarization as high as 90%. - **Spin - Hall Effect**: In the TI surface states, electrons with spin "up" and spin "down" will flow to different electrodes respectively, producing a measurable spin - Hall effect. ### Conclusion Through this method, researchers can bypass the limitations of traditional methods and directly measure the spin - momentum coupling in the TI surface states, providing an important basis for further research on the physical properties of topological insulators and the development of new spintronic devices.

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