Abstract:Widespread applications of spintronic devices require an efficient method to manipulate the local magnetization. Topological insulators, such as Bi2Se3, are an emerging state of quantum matter, expected to exhibit more efficient charge-to-spin conversion and thus spin-obit torques (SOTs) compared to that of heavy metals. Here, we investigate the SOTs in the Bi2Se3/ferromagnet hetrostructures at different temperatures by the spin torque ferromagnetic resonance (ST-FMR) technique. We find that the SOTs efficiency abruptly increases from 0.047 at 300 K to 0.42 below 50 K. Moreover, we observe a significant out-of-plane SOT efficiency in the low temperature range. We identify that the spin-momentum-locked topological surface states (TSS) play an important role in the strong SOTs. By decreasing the Bi2Se3 thickness, we achieve TSS dominant SOT. The SOT efficiency is enhanced by more than 5 times below 8 quintuple layers and reaches a maximum value of ~1.75 at 5 quintuple layers at room temperature. In addition, the electron-mediated spin torque induced magnetization switching in the Bi2Se3/NiFe heterostructure is successfully achieved at room temperature. The switching current density, JC, is extremely low (~6 × 10^5 A/cm^2), which is much smaller than that in heavy metals. Our results illustrate that the thinner topological insulators possess a strong capability for generating SOTs. We also report the magnetization reorientation induced by magnon-mediated spin torque in topological insulator devices. Much less Joule heating is expected by taking advantage of magnons, which can carrier spin angular momentum without involving moving charges. Our observation is of importance for magnon-based future spin-devices.

Room Temperature Spin Pumping in Topological Insulator Bi2Se3

Surface-State-Dominated Spin-Charge Current Conversion in Topological-Insulator-Ferromagnetic-Insulator Heterostructures.

Room-temperature spin injection and spin-to-charge conversion in a ferromagnetic semiconductor / topological insulator heterostructure

Room Temperature Magnetization Switching in Topological Insulator-Ferromagnet Heterostructures by Spin-Orbit Torques

Topological Surface States Originated Spin-Orbit Torques in Bi2Se3

Bilinear Magnetoelectric Resistance As a Probe of Three-Dimensional Spin Texture in Topological Surface States

Large Room Temperature Charge-to-Spin Conversion Efficiency in Topological Insulator/CoFeB bilayers

Fermi Level Dependent Spin Pumping from a Magnetic Insulator into a Topological Insulator

Spin pumping in Ferromagnet-Topological Insulator-Ferromagnet Heterostructures

Bulk topological insulators as inborn spintronics detectors

Topological surface state induced spin pumping in sputtered topological insulator (Bi2Te3)–ferromagnet (Co60Fe20B20) heterostructures

Towards the understanding of the origin of charge-current-induced spin voltage signals in the topological insulator Bi$_2$Se$_3$

Spin Hall photoconductance in a 3D topological insulator at room temperature

Magnetization Switching Induced by Electron- and Magnon-Mediated Spin Torque in Topological Insulator Devices (conference Presentation)

Room temperature nonlocal detection of charge-spin interconversion in a topological insulator

Ultrafast Spin‐to‐Charge Conversion at the Surface of Topological Insulator Thin Films

Electrical Detection of Spin-Polarized Surface States Conduction in (bi(0.53)sb(0.47))2te3 Topological Insulator.

Proximity-induced Magnetic Order in Topological Insulator on Ferromagnetic Semiconductor

High spin Hall angle in BiSb topological insulator and perpendicularly magnetized CoFeB/MgO multilayers with metallic interfacial layers

Enhanced spin pumping in heterostructures of coupled ferrimagnetic garnets