Abstract:Three-dimensional (3D) topological insulators are known for their strong spin-orbit coupling and the existence of spin-textured topological surface states which could be potentially exploited for spintronics. Here, we investigate spin pumping from a metallic ferromagnet (CoFeB) into a 3D topological insulator (Bi2Se3) and demonstrate successful spin injection from CoFeB into Bi2Se3 and the direct detection of the electromotive force generated by the inverse spin Hal effect (ISHE) at room temperature. The spin pumping, driven by the magnetization dynamics of the metallic ferromagnet, introduces a spin current into the topological insulator layer, resulting in a broadening of the ferromagnetic resonance (FMR) linewidth. We find that the FMR linewidth more than quintuples, the spin mixing conductance can be as large as 3.4*10^20m^-2 and the spin Hall angle can be as large as 0.23 in the Bi2Se3 layer.

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to experimentally verify the spin - pumping effect at the interface between three - dimensional topological insulator (Bi₂Se₃) and ferromagnetic metal (CoFeB) at room temperature, and detect the electric potential generated by the inverse spin - Hall effect (ISHE). Specifically, the research aims to: 1. **Achieve spin injection**: Inject spin current from the ferromagnetic metal layer (CoFeB) into the topological insulator layer (Bi₂Se₃) and directly detect the resulting inverse spin - Hall effect (ISHE) voltage. 2. **Quantify spin - dynamic characteristics**: Measure and analyze key parameters such as the change in ferromagnetic resonance (FMR) linewidth, spin - mixing conductivity, and spin - Hall angle. 3. **Understand interface effects**: Explore the significant differences in spin - pumping characteristics between different samples, which may be related to the inhomogeneity of the Bi₂Se₃ surface. ### Specific problems and solutions - **Spin injection and detection**: - Researchers use GHz radio - frequency magnetic fields to excite magnetization dynamics in the ferromagnetic metal layer, thereby driving spin current into the topological insulator layer. - Through the inverse spin - Hall effect (ISHE), the spin current is converted into a measurable charge current, and then the output voltage is detected. - **Quantify spin - dynamic characteristics**: - The increase in FMR linewidth indicates the existence and intensity of spin current. - Spin - mixing conductivity (\( g^{\uparrow \downarrow} \)) and spin - Hall angle (\( \theta_{SHE} \)) are important parameters for measuring spin - transport efficiency. - Calculate spin - mixing conductivity using the formula: \[ g^{\uparrow \downarrow} = \frac{2}{\mu_B M_s} \frac{\Delta H_{SP} - \Delta H_{FMR}}{\gamma d_{CFB}} \] - The formula for calculating the spin - Hall angle is: \[ \theta_{SHE} = \frac{\tanh \left( \frac{d_N}{2 \lambda_N} \right)}{2 \left( \frac{N_F}{N_N} + \frac{d_N}{\lambda_N} \right)} \] - **Understanding of interface effects**: - Experimental results show that there are significant differences in spin - pumping characteristics among different samples, which may be caused by the inhomogeneity at the interface between Bi₂Se₃ and CoFeB. - Surface roughness, compositional inhomogeneity, and the decapping process may all affect spin - pumping efficiency. ### Conclusion This research shows that Bi₂Se₃, as a three - dimensional topological insulator, has great potential in spintronics applications at room temperature, especially in achieving efficient spin injection and detection. However, the inhomogeneity of the Bi₂Se₃ surface remains a challenge to be overcome.

Room Temperature Spin Pumping in Topological Insulator Bi2Se3

Room-temperature spin injection and spin-to-charge conversion in a ferromagnetic semiconductor / topological insulator heterostructure

Bilinear Magnetoelectric Resistance As a Probe of Three-Dimensional Spin Texture in Topological Surface States

Large Room Temperature Charge-to-Spin Conversion Efficiency in Topological Insulator/CoFeB bilayers

Spin pumping in Ferromagnet-Topological Insulator-Ferromagnet Heterostructures

Bulk topological insulators as inborn spintronics detectors

Topological surface state induced spin pumping in sputtered topological insulator (Bi2Te3)–ferromagnet (Co60Fe20B20) heterostructures

Towards the understanding of the origin of charge-current-induced spin voltage signals in the topological insulator Bi$_2$Se$_3$

Spin Hall photoconductance in a 3D topological insulator at room temperature

Room temperature nonlocal detection of charge-spin interconversion in a topological insulator

Electrical Detection of Spin-Polarized Surface States Conduction in (bi(0.53)sb(0.47))2te3 Topological Insulator.

High spin Hall angle in BiSb topological insulator and perpendicularly magnetized CoFeB/MgO multilayers with metallic interfacial layers

Enhanced spin pumping in heterostructures of coupled ferrimagnetic garnets

Spin-polarized Quantum Well States Onbi2−xfexse3

Experimental investigation of the effect of topological insulator on the magnetization dynamics of ferromagnetic metal: $BiSbTe_{1.5}Se_{1.5}$ and $Ni_{80}Fe_{20}$ heterostructure

Spin-orbit torques and spin Hall magnetoresistance generated by twin-free and amorphous Bi0.9Sb0.1 topological insulator films

Spin pumping effect in non-Fermi liquid metals

Observation of inverse spin Hall effect in bismuth selenide

(Invited) Towards Topological Antiferromagnetic Spintronics

Gate-controlled spin extraction from topological insulator surfaces