Abstract:We have experimentally and theoretically investigated the spin injection/detection polarization in a Si-based ferromagnetic tunnel junction with an amorphous MgO layer, and demonstrated that the experimental features of the spin polarization in a wide bias range can be well explained using our theoretical model based on the band diagram of the junction and the direct tunneling mechanism. It is shown that the spin polarization originates from the band diagrams of the ferromagnetic Fe layer and n+-Si channel in the junction, while the spin selectivity of the MgO tunnel barrier is not necessary. Besides, we clarified the mechanism of the reduction in spin polarization when the bias is high and nonlinear properties are prominent, where the widely-used spin injection/detection model proposed by Valet and Fert is not applicable. The dominant mechanism of such reduction is found to be spin accumulation saturation (SAS) at the n+-Si interface in contact with the MgO layer as the bias is increased in the spin extraction geometry, which is inevitable in semiconductor-based ferromagnetic tunnel junctions. We performed numerical calculations on a two-terminal spin transport device with a n+-Si channel using the junction properties extracted from the experiments, and revealed that the magnetoresistance (MR) ratio is suppressed mainly by SAS in a higher bias range. Furthermore, we proposed methods for improving the MR ratio in two-terminal spin transport devices. Our experiments and theoretical model provide a deep understanding of the spin injection/detection phenomena in semiconductor-based spin transport devices, toward the realization of high performance under reasonably high bias conditions for practical use.

Non-ohmic Spin Transport in N-Type Doped Silicon

Efficient Spin Injection into Silicon and the Role of the Schottky Barrier

Thermal creation of electron spin polarization in n-type silicon

Experimental realization of a silicon spin field-effect transistor

Spin lifetime in silicon in the presence of parasitic electronic effects

Spin pump induced inverse spin Hall effect observed in Bi-doped n -type Si

Study of the spin-pump-induced inverse spin-Hall effect in Bi doped n-type Si

Spin-Dependent Transport Across Co/Laalo3/Srtio3 Heterojunctions

Electric-field Strength and Doping Level Controlled Spin-Valley Transport in a Silicene Np Junction

Transport Through Dopant Atom Arrays in Silicon Junctionless Nanowire Transistor

Hanle-Effect Measurements of Spin Injection from Mn5ge3c0.8/Al2o3-Contacts into Degenerately Doped Ge Channels on Si

Spin injection and detection in lanthanum- and niobium-doped SrTiO 3 using the Hanle technique

Ambipolar quantum dots in intrinsic silicon

Spin-polarized Transport in Multiterminal Silicene Nanodevices

Spin-polarized transport in inhomogeneous magnetic semiconductors: theory of magnetic/nonmagnetic p-n junctions

Linear magnetoresistance in commercial n-type silicon due to inhomogeneous doping

Spin-Hall effect and emergent antiferromagnetic phase transition in n-Si

Demonstration of efficient spin injection and detection into p-Si using NiFe2O4 based spin injector in NiFe2O4/MgO/p-Si device

Room-temperature detection of spin accumulation in silicon across Schottky tunnel barriers using a MOSFET structure

Spin injection and detection in a Si-based ferromagnetic tunnel junction: A theoretical model based on the band diagram and experimental demonstration

Electric-field-dependent Charge Delocalization from Dopant Atoms in Silicon Junctionless Nanowire Transistor