Abstract:We theoretically investigate electron spin injection and spin-polarization sensitive current detection at Schottky contacts between a ferromagnetic metal and an n-type or p-type semiconductor. We use spin-dependent continuity equations and transport equations at the drift-diffusion level of approximation. Spin-polarized electron current and density in the semiconductor are described for four scenarios corresponding to the injection or the collection of spin polarized electrons at Schottky contacts to n-type or p-type semiconductors. The transport properties of the interface are described by a spin-dependent interface resistance, resulting from an interfacial tunneling region. The spin-dependent interface resistance is crucial for achieving spin injection or spin polarization sensitivity in these configurations. We find that the depletion region resulting from Schottky barrier formation at a metal/semiconductor interface is detrimental to both spin injection and spin detection. However, the depletion region can be tailored using a doping density profile to minimize these deleterious effects. For example, a heavily doped region near the interface, such as a delta-doped layer, can be used to form a sharp potential profile through which electrons tunnel to reduce the effective Schottky energy barrier that determines the magnitude of the depletion region. The model results indicate that efficient spin-injection and spin-polarization detection can be achieved in properly designed structures and can serve as a guide for the structure design.

Reverse Schottky-asymmetry spin current detectors

Efficient Spin Injection into Silicon and the Role of the Schottky Barrier

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Room-temperature detection of spin accumulation in silicon across Schottky tunnel barriers using a MOSFET structure

Spin accumulation in forward-biased MnAs/GaAs Schottky diodes

Asymmetric Effect on Spin Polarization in A Spin-Filter Device Using Nonmagnetic Triple-Barrier Structure

Efficient nonlinear room-temperature spin injection from ferromagnets into semiconductors through a modified Schottky barrier

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A Novel Spin-Polarized Transport Effect Based on Double-Schottky Barriers

Spin accumulation in degenerate semiconductors near modified Schottky contact with ferromagnets

Interferometric detection of spin-polarized transport in the depletion layer of a metal-GaAs Schottky barrier

Thermospin diode effect based on a quantum dot system

Calculations of the Spin-Polarization of the Electronic Current Injected from A Ferromagnetic Metal into A Semiconductor

35% magnetocurrent with spin transport through Si