Abstract:The spin filtering effect, distinct decaying lengths experienced by oppositely spin-polarized electrons in a magnetic barrier, generally occurs in ferromagnetic (FM) insulators or semiconductors. With the rise of altermagnetic (ALM) materials which exhibit similar capability of spin-polarizing electrons with ferromagnets, it is a nature question whether the ALM insulators or semiconductors can also act as unique barriers for the spin splitting effect. Here, through first-principles calculations, we investigated the complex band structure of the ALM insulator FeF$_2$ and found that it possesses an anisotropic spin filtering effect: along the [001] direction of FeF$_2$, a current remains spin-neutral but has locally nonvanishing spin polarizations in the momentum space; moreover, along the [110] direction of FeF$_2$, a current will be globally spin-polarized by different attenuation lengths of oppositely spin-polarized electrons. Leveraging this anisotropic spin filtering effect, we designed two types of MTJs with the ALM barrier: ALM electrode/ALM insulator barrier/non-magnetic (NM) electrode and FM electrode/ALM insulator barrier/NM electrode, using RuO$_2$(001)/FeF$_2$/IrO$_2$ and CrO$_2$(110)/FeF$_2$/IrO$_2$ as the corresponding prototypes, respectively. We found that these two proposed MTJs exhibited the tunneling magnetoresistance (TMR) ratios of 216\% and 3956\%, by matching the conduction channels of the electrodes and the spin-resolved lowest decay rate of the barrier in the momentum space. Our work deepens and generalizes understanding toward the spin filtering effect for the rising ALM insulators and semiconductors, and broadens applications of the AFM spintronics.

Asymmetric Effect on Spin Polarization in A Spin-Filter Device Using Nonmagnetic Triple-Barrier Structure

Spin Filtering in the Double-Barrier Structure

Spin Filtering Through Multi- -Magnetic-barrier Structures

Spin filtering and spin separation in diluted magnetic semiconductor hybrid systems

Spin Filtering in Single Magnetic Barrier Structures Revisited

Anisotropic spin filtering by an altermagnetic barrier in magnetic tunnel junctions

Spin Filtering Implemented Through Rashba Spin-Orbit Coupling and Weak Magnetic Modulations

Spin polarization created by spin-orbit coupling for electrons in a hybrid magnetic-electric-barrier semiconductor microstructure

Spin Filtering And Spin-Polarization Reversal In Multilayered Ferromagnetic Metal/Semiconductor Heterostructures

A Study on Spin-Polarized Transport Properties in Magnetic-Electric Barrier Structures

Current and Spin-Filtering Dual Diodes Based on Diluted Magnetic Semiconductor Heterostructures with A Nonmagnetic Barrier

Wave-vector Filtering and Spin Filtering in a Magnetic Double-Barrier and Double-Well Structure

Electron-spin filter based on Dresselhaus spin-orbit-coupling modulated double-layered semiconductor microstructure

Spin-polarized Transport Through a Magnetic Heterostructure: Tunneling and Spin Filtering Effect

Spin Filtering in Parallel Magnetic-Barrier Structures

Spin-filtering Junctions with Double Ferroelectric Barriers

Magnetically Tunable Spin Filtering in Semiconductor Nanowires

Spin transmission in a series of magnetic barrier structure

Spin Polarization Induced By An External Electric Field In A Hybrid Magnetic-Electric Barrier

Non-equilibrium spin polarisation via interfacial exchange-field spin filtering

Spin-filter Diode Based on ZnSe/Zn1−xMnxSe/Zn1−yMnySe/ZnSe Heterostructures