Electrical Preparation and Readout of A Single Spin State in A Quantum Dot Via Spin Bias
Feng Chi,Qing-feng Sun
DOI: https://doi.org/10.1103/physrevb.81.075310
2010-01-01
Abstract:Based on the device in recent experiments [S. M. Frolov et al., Phys. Rev. Lett. 102, 116802 (2009); Nature (London) 458, 868 (2009)], we propose an all-electrical scheme to prepare and readout a single spin state in a quantum dot (QD). We consider that the QD, which is subjected to a spin bias, has a single spin-degenerate energy level epsilon(d) in the presence of Coulomb interaction U. By tuning the energy level controlled experimentally by a gate voltage, write in and read out the spin information can be achieved in the following way. When the level epsilon(d) is within the spin bias window, a spin state can be written into the dot even for very weak spin bias. When both epsilon(d) and epsilon(d)+U are tuned to be out of the spin bias window, the initialized spin state can be preserved on the dot for a very long time (e.g., on the order of second), during which many qubit manipulations can be accomplished. Finally, by tuning the level epsilon(d)+U to the spin bias window, the spin state can be read out by measuring the charge current.