Abstract:We report on a theoretical study of the electron transport through laterally-confined, vertical double-barrier resonant-tunneling (DBRT) structures, defined as one-dimensional (1D)-0D-1D systems, with a tunable lateral confinement. The current and the differential conductance of the systems are calculated and the influence caused by varying the lateral confinement on the device characteristics is investigated. Three representative systems are studied. First of all, a 1D-0D-1D device, symmetric with respect to the current flow, with a variable lateral confinement in the double-barrier quantum-well (DBQW) region, is investigated. This device would in an experimental setup correspond to the structure in which a thin, lateral metallic gate is placed in the DBQW region. Subsequently, calculations are performed for two asymmetric 1D-0D-1D devices, in which the strongest, but varying, lateral confinement is placed either in the collector or in the emitter region. In experiments, these two devices would correspond to the situations where a lateral metallic gate is positioned below or on top of the DBQW structure. The calculations predict several phenomena for the device characteristics. It is shown that as the lateral confinement increases, in addition to those normally observed current onsets and pinch-offs that move toward higher bias voltages, several current onsets and pinch-offs move towards lower bias voltages. These negative shifts of the current onsets and pinch-offs with increasing of the lateral confinement have so far not been expected for gated DBRT devices. It is also found that the threshold voltages, at which the current onsets and pinch-offs appear, depend strongly on the strength and position of the lateral confinement and on the Fermi levels in the collector and the emitter. The models that explain these predictions are presented and discussed.

Fine Structure in the High Bias Current of Vertical Quantum Dot Molecules

Branch Current Behavior at Two Level Anti-crossings in Vertical Quantum Dot Single-particle Spectra

Tunneling Effects on Fine-Structure Splitting in Quantum Dot Molecules

Power Spectra and Auto Correlation Analysis of Hyperfine-Induced Long Period Oscillations in the Tunneling Current of Coupled Quantum Dots

Fine-structure Splitting of Exciton States in Semiconductor Quantum Dot Molecules

Spectral Properties Of A Double-Quantum-Dot Structure: A Causal Green'S Function Approach

Transport properties of two laterally coupled vertical quantum dots in series with tunable inter-dot coupling

Fine-structure splitting of exciton states in quantum dot molecules: symmetry and tunnel-coupling effects

Coupled vertical double quantum dots at single-hole occupancy

Characteristics Of Electron Transport Through Vertical Double-Barrier Quantum-Dot Structures: Effects Of Symmetric And Asymmetric Variations Of The Lateral Confinement Potentials

Spin-Orbit Coupling and Tunneling Current in a Parabolic Quantum Dot

Physical Origins of Fine Structure in the Resonant Tunneling Through Laterally Confined 1D-0D-1d Structures

Effects of different geometries on the conductance, shot noise and tunnel magnetoresistance of double quantum dots

Polarization Splitting of Exciton States in Laterally Coupled Quantum Dots

Electrical Control of Quantum-Dot Fine-Structure Splitting for High-Fidelity Hole Spin Initialization

Nonequilibrium Keldysh Formalism for Interacting Leads-Application to Quantum Dot Transport Driven by Spin Bias

Dynamics Of Electrons In A Double Quantum Dot Biased By An Ac Voltage: Nonlinear Effect Of Coulomb Interaction

Transport through side-coupled double quantum dots: from weak to strong interdot coupling

Transient Dynamics of a Quantum-Dot in the Mixed Valence Regime

Transient Process of Transport Through a Quantum Dot in a Stepped Bias: a Numerical Approach