Bias and Temperature Dependence of Hot Electron Transport in A Spin-Valve Structure

JS Hong,RQ Wu
DOI: https://doi.org/10.1063/1.1544475
IF: 2.877
2003-01-01
Journal of Applied Physics
Abstract:We have explored spin-dependent hot electron transport in a magnetic tunneling junction at finite temperatures. The inelastic mean-free path has been extracted from either theoretical calulations or experimental measurements. The temperature dependence of hot electron spin polarization has been modeled according to P0[1−(T/Tc)3/2]. The bias dependence of magnetocurrent agrees in trend with experiments, which indicates that the model adopted here indeed displays the key factors in these phenomena.
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