Bias dependence of magnetic exchange interactions: application to interlayer exchange coupling in spin valves

Paul M. Haney,Christian Heiliger,Mark D. Stiles
DOI: https://doi.org/10.1103/PhysRevB.79.054405
2008-09-26
Abstract:We study how a bias voltage changes magnetic exchange interactions. We derive a general expression for magnetic exchange interactions for systems coupled to reservoirs under a bias potential, and apply it to spin valves. We find that for metallic systems, the interlayer exchange coupling shows a weak, oscillatory dependence on the bias potential. For tunneling systems, we find a quadratic dependence on the bias potential, and derive an approximate expression for this bias dependence for a toy model. We give general conditions for when the interlayer exchange coupling is a quadratic function of bias potential.
Mesoscale and Nanoscale Physics
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to understand how the bias voltage changes the magnetic exchange interaction, especially the interlayer exchange coupling (IEC) in spin valves. Specifically, the authors studied the variation characteristics of IEC in metal systems and tunneling systems under the application of bias voltage, and attempted to explain the different dependencies observed experimentally. ### Research Background Magnetic multilayers and spin valves exhibit rich magnetoelectronic phenomena, including giant magnetoresistance, interlayer exchange coupling, and spin - transfer torque. Interlayer exchange coupling is an indirect exchange interaction, similar to the Ruderman - Kittel - Kasuya - Yosida (RKKY) interaction, in which the equilibrium electrons in the non - magnetic spacer layer act as intermediaries. This coupling causes the magnetization directions of the magnetic layers to tend to be arranged in parallel or antiparallel. ### Main Problems 1. **Metal System**: For the metal system, the dependence of the interlayer exchange coupling on the bias voltage is weak and oscillatory. 2. **Tunneling System**: For the tunneling system, the dependence of the interlayer exchange coupling on the bias voltage is quadratic, and an approximate expression is derived to describe this dependence. ### Research Methods The authors adopted the non - equilibrium Green's function method to calculate the interlayer exchange coupling. By considering the system connected to two reservoirs (left lead and right lead) at different chemical potentials and using the spirit of the Landauer transport theory, they derived a general expression for the magnetic exchange interaction applicable to non - equilibrium systems. ### Key Findings - For the metal system, in the limit of weak magnetic potential and large spacer thickness, the interlayer exchange coupling shows an oscillatory dependence on the bias voltage, but within the experimentally accessible bias voltage range, the change is very small and almost negligible. - For the half - metal and tunneling systems, in a symmetric structure, the interlayer exchange coupling has a quadratic dependence on the bias voltage. By analyzing the electron contributions from the left and right electrodes, the authors obtained a simplified analytical expression and compared it with the numerical results. ### Experimental Comparison The paper also discussed the differences between different experimental results, especially in the tunneling system, where the experimentally reported dependence of the interlayer exchange coupling on the bias voltage is sometimes linear and sometimes quadratic. The authors hope to provide explanations for these inconsistent results through theoretical analysis. ### Summary In general, through theoretical derivations and model calculations, this paper explored in detail the influence of bias voltage on interlayer exchange coupling, especially the different behaviors in metal systems and tunneling systems. These studies are helpful for understanding the magnetic interaction mechanisms in spin valves and other magnetoelectronic devices. If you have more specific questions or need further explanations, please feel free to let me know!