Abstract:This study presents a thermal cycling method to tune the exchange bias field (HEB) in van der Waals (vdW) heterostructures by altering the interlayer distance between antiferromagnet (AFM) and ferromagnet (FM). An overview comparing the largest HEB observed in vdW AFM/FM heterostructures reported in literature along with the present study is provided, a. Over a sequence of 15 heating–cooling cycles, a five fold change in the magnitude of HEB at 5 K is observed because of a modified interface registry induced by thermal cycling, b and c. The exchange bias phenomenon, inherent in exchange‐coupled ferromagnetic and antiferromagnetic systems, has intrigued researchers for decades. Van der Waals materials, with their layered structures, offer an ideal platform for exploring exchange bias. However, effectively manipulating exchange bias in van der Waals heterostructures remains challenging. This study investigates the origin of exchange bias in MnPS3/Fe3GeTe2 van der Waals heterostructures, demonstrating a method to modulate nearly 1000% variation in magnitude through simple thermal cycling. Despite the compensated interfacial spin configuration of MnPS3, a substantial 170 mT exchange bias is observed at 5 K, one of the largest observed in van der Waals heterostructures. This significant exchange bias is linked to anomalous weak ferromagnetic ordering in MnPS3 below 40 K. The tunability of exchange bias during thermal cycling is attributed to the amorphization and changes in the van der Waals gap during field cooling. The findings highlight a robust and adjustable exchange bias in van der Waals heterostructures, presenting a straightforward method to enhance other interface‐related spintronic phenomena for practical applications. Detailed interface analysis reveals atom migration between layers, forming amorphous regions on either side of the van der Waals gap, emphasizing the importance of precise interface characterization in these heterostructures.

Exchange Bias Modulated by Antiferromagnetic Spin-Flop Transition in 2D Van der Waals Heterostructures

Exchange bias in the van der Waals heterostructure MnBi2Te4/Cr2Ge2Te6

Exchange Bias in Van Der Waals CrCl3/Fe3GeTe2 Heterostructures.

Exchange bias between van der Waals materials: tilted magnetic states and field-free spin-orbit-torque switching

Harnessing van der Waals CrPS4 and Surface Oxides for non-monotonic pre-set field induced Exchange Bias in Fe3GeTe2

Manipulating exchange bias by spin–orbit torque

Manipulating Exchange Bias in 2D Magnetic Heterojunction for High-Performance Robust Memory Applications

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Exchange bias in van der Waals MnBi$_2$Te$_4$/Cr$_2$Ge$_2$Te$_6$ heterostructure

Exchange bias switching in an antiferromagnet/ferromagnet bilayer driven by spin–orbit torque

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Tuning the Exchange Bias Effect in 2D van der Waals Ferro‐/Antiferromagnetic Fe 3 GeTe 2 /CrOCl Heterostructures

Stacking-dependent exchange bias in two-dimensional ferromagnetic/antiferromagnetic bilayers

Harnessing Van der Waals CrPS 4 and Surface Oxides for Nonmonotonic Preset Field Induced Exchange Bias in Fe 3 GeTe 2

Tunable perpendicular exchange bias in oxide heterostructures

Exchange Bias Effect of Epitaxial Noncollinear Antiferromagnetic Mn3Sn Films

Tuning the Exchange Bias Effect in 2D van der Waals Ferro-/Antiferromagnetic Fe<sub>3</sub>GeTe<sub>2</sub>/CrOCl Heterostructures

Crystal Structure Manipulation of the Exchange Bias in an Antiferromagnetic Film

Identifying the Origin of Thermal Modulation of Exchange Bias in MnPS3/Fe3GeTe2 van der Waals Heterostructures