Abstract:Antiferromagnetic spintronic devices have the potential to outperform conventional ferromagnetic devices due to their ultrafast dynamics and high data density. A challenge in designing these devices is the control and detection of the orientation of the anti-ferromagnet. One of the most promising ways to achieve this is through the exchange bias effect. This is of particular importance in large scale multigranular devices. Due to the large system sizes, previously, only micromagnetic simulations have been possible, these have an assumed distribution of antiferromagnetic anisotropy directions. Here, we use an atomistic model where the distribution of antiferromagnetic anisotropy directions occurs naturally and the exchange bias occurs due to the intrinsic disorder in the antiferromagnet. We perform large scale simulations, generating realistic values of exchange bias. We find a strong temperature dependance of the exchange bias, which approaches zero at the blocking temperature while the coercivity has a peak at the blocking temeprature due to the superparamagnetic flipping of the antiferromagnet during the hysteresis loop. We find a large discrepancy between the exchange bias predicted from a geometric model of the antiferromagnetic interface indicating the importance of grain edge effects in multigranular exchange biased systems. The grain size dependence shows the expected peak due to a competition between the superparamagnetic nature of small grains and reduction in the statistical imbalance in the number of interfacial spins for larger grain sizes. Our simulations confirm the existence of single antiferromagnetic domains within each grain. The model gives insights into the physical origin of exchange bias and provides a route to developing optimised nanoscale antiferromagnetic spintronic devices.

Exchange bias effect of epitaxial noncollinear antiferromagnetic Mn 3 Sn films

Exchange Bias Effect of Epitaxial Noncollinear Antiferromagnetic Mn3Sn Films

Exchange Bias in Antiferromagnetic Mn3Sn Monolayer Films

Observation of Omnidirectional Exchange Bias at All Antiferromagnetic Polycrystalline Heterointerface

Large Exchange Bias Triggered by Transition Zone of Spin Glass

Exchange Bias Effect and Magnetic Properties in ${\Hbox{la}}_{0.7}{\hbox{sr}}_{0.3}{\hbox{mno}}_{3}\hbox{-}{\Hbox{nio}}$ Nanocomposite Films

Exchange Bias Effects in Ferromagnetic MnSb2Te4 Down to a Monolayer

Exchange bias in the van der Waals heterostructure MnBi2Te4/Cr2Ge2Te6

Exchange Bias Effects in Ferromagnetic MnSb 2 Te 4 down to a Monolayer

Defect-Assisted Domain Nucleation Drives Unique Exchange Bias Phenomena in MnBi_2Te_4

The origin of exchange bias in multigranular non-collinear IrMn$_3$/CoFe thin films

Ionically driven synthesis and exchange bias in Mn4N/MnN x heterostructures

Exchange Bias Effects in Ferromagnetic MnSb<sub>2</sub>Te<sub>4</sub> down to a Monolayer

Exchange bias induced by CoMn2O4 interface grown through sequential annealing in Mn2O3@Co3O4 core–shell nanocomposite

Defect-Assisted Domain Nucleation Drives Unique Exchange Bias Phenomena in $\bf{MnBi_2Te_4}$

Exchange bias in Sm$ _{2} $NiMnO$ _{6}$/BaTiO$ _{3}$ ferromagnetic-diamagnetic heterostructure thin films

Even-Odd Layer-Dependent Exchange Bias Effect in MnBi2Te4 Chern Insulator Devices

Ionically-Driven Synthesis and Exchange Bias in Mn$_{4}$N/MnN$_{x}$ Heterostructures

Exchange Bias Effect in Phase Separated La0.33Pr0.34Ca0.33MnO3 Thin Films

Exchange Bias Behavior and Magnetocaloric Effect in Ni2In-type Mn7Sn4 Alloy

Exchange Bias in A Single Lamno3 Film Induced by Vertical Electronic Phase Separation