Abstract:To explore spintronics applications for Ge nanowire heterostructures formed by thermal annealing, it is critical to develop a ferromagnetic germanide with high Curie temperature and take advantage of the high-quality interface between Ge and the formed ferromagnetic germanide. In this work, we report, for the first time, the formation and characterization of Mn(5)Ge(3)/Ge/Mn(5)Ge(3) nanowire transistors, in which the room-temperature ferromagnetic germanide was found through the solid-state reaction between a single-crystalline Ge nanowire and Mn contact pads upon thermal annealing. The atomically clean interface between Mn(5)Ge(3) and Ge with a relatively small lattice mismatch of 10.6% indicates that Mn(5)Ge(3) is a high-quality ferromagnetic contact to Ge. Temperature-dependent I-V measurements on the Mn(5)Ge(3)/Ge/Mn(5)Ge(3) nanowire heterostructure reveal a Schottky barrier height of 0.25 eV for the Mn(5)Ge(3) contact to p-type Ge. The Ge nanowire field-effect transistors built on the Mn(5)Ge(3)/Ge/Mn(5)Ge(3) heterostructure exhibit a high-performance p-type behavior with a current on/off ratio close to 10(5), and a hole mobility of 150-200 cm(2)/(V s). Temperature-dependent resistance of a fully germanided Mn(5)Ge(3) nanowire shows a clear transition behavior near the Curie temperature of Mn(5)Ge(3) at about 300 K. Our findings of the high-quality room-temperature ferromagnetic Mn(5)Ge(3) contact represent a promising step toward electrical spin injection into Ge nanowires and thus the realization of high-efficiency spintronic devices for room-temperature applications.

Engineering of Tunnel Junctions for Prospective Spin Injection in Germanium

Spin Valve Effect in the Van Der Waals Heterojunction of Fe3GeTe2/tellurene/Fe3GeTe2

Tunable Asymmetric Magnetoresistance in an Fe3GeTe2/graphite/Fe3GeTe2 Lateral Spin Valve.

Ge CMOS Technology with Advanced Interface and Junction Engineering.

High-Efficient Spin Injection in GaN at Room Temperature Through A Van der Waals Tunnelling Barrier

High-efficient spin injection in GaN through a lattice-matched tunnel layer

Lateral Spin Injection in Germanium Nanowires

Ferromagnetic Germanide in Ge Nanowire Transistors for Spintronics Application

Spin pumping and laser modulated inverse spin Hall effect in yttrium iron garnet/germanium heterojunctions

Nige Metal Source/Drain Ge Pmosfets For Future High Performance Vlsi Circuits Applications

Strain Engineering for Germanium-on-Insulator Mobility Enhancement with Phase Change Liner Stressors*

Lateral spin injection and detection through electrodeposited Fe/GaAs contacts

High-Performance Germanium pMOSFETs With NiGe Metal Source/Drain Fabricated by Microwave Annealing

High Performance Ge Ultra-Shallow Junctions Fabricated by A Novel Formation Technique Featuring Spin-On Dopant and Laser Annealing for Sub-10 Nm Technology Applications

Electrical spin injection and transport in germanium

Hanle-Effect Measurements of Spin Injection from Mn5ge3c0.8/Al2o3-Contacts into Degenerately Doped Ge Channels on Si

Spin Transport in Ge Nanowires for Diluted Magnetic Semiconductor-Based Nonvolatile Transpinor

Proximity Induced Enhancement of the Curie Temperature in Hybrid Spin Injection Devices.

Spin Injection into Heavily-Doped N-Gan Via Schottky Barrier

Spin-dependent transport in van der Waals magnetic tunnel junctions with Fe3GeTe2 electrodes

Spin Injection: Interface Resistance in Fe/Semiconductor Junctions Calculated from First Principles