Abstract:In semiconductor spintronic devices, the semiconductor is usually lightly doped and nondegenerate, and moderate electric fields can dominate the carrier motion. We recently derived a drift-diffusion equation for spin polarization in the semiconductors by consistently taking into account electric-field effects and nondegenerate electron statistics and identified a high-field diffusive regime which has no analogue in metals. Here spin injection from a ferromagnet (FM) into a nonmagnetic semiconductor (NS) is extensively studied by applying this spin drift-diffusion equation to several typical injection structures such as FM/NS, FM/NS/FM, and FM/NS/NS structures. We find that in the high-field regime spin injection from a ferromagnet into a semiconductor is enhanced by several orders of magnitude. For injection structures with interfacial barriers, the electric field further enhances spin injection considerably. In FM/NS/FM structures high electric fields destroy the symmetry between the two magnets at low fields, where both magnets are equally important for spin injection, and spin injection becomes locally determined by the magnet from which carriers flow into the semiconductor. The field-induced spin injection enhancement should also be insensitive to the presence of a highly doped nonmagnetic semiconductor (NS$^+$) at the FM interface, thus FM/NS$^+$/NS structures should also manifest efficient spin injection at high fields. Furthermore, high fields substantially reduce the magnetoresistance observable in a recent experiment on spin injection from magnetic semiconductors.

Spin Injection: Interface Resistance in Fe/Semiconductor Junctions Calculated from First Principles

Spin injection from a ferromagnet into a semiconductor in the case of a rough interface

Lateral spin injection and detection through electrodeposited Fe/GaAs contacts

Influence of interface structure on electronic properties and Schottky barriers in Fe/GaAs magnetic junctions

Towards spin injection from silicon into topological insulators: Schottky barrier between Si and Bi2Se3

Spin-Polarized Electron Transport at Ferromagnet/Semiconductor Schottky Contacts

Spin Injection Based on the Spin Gapless Semiconductor(sgs)/semiconductor Heterostructures

Conditions for efficient spin injection from a ferromagnetic metal into a semiconductor

Electron Interaction Effects on Spin Injection into Semiconductors

Engineering of Tunnel Junctions for Prospective Spin Injection in Germanium

High-Efficient Spin Injection in GaN at Room Temperature Through A Van der Waals Tunnelling Barrier

Complete spin extraction from semiconductors near ferromagnet-semiconductor interfaces

Calculations of the Spin-Polarization of the Electronic Current Injected from A Ferromagnetic Metal into A Semiconductor

Lateral Spin Injection in Germanium Nanowires

Efficient nonlinear room-temperature spin injection from ferromagnets into semiconductors through a modified Schottky barrier

The starburst-AGN of NGC1808 observed with XMM-Newton

Electron space charge effect on spin injection into semiconductors

Spin diffusion and injection in semiconductor structures: Electric field effects

High-efficient spin injection in GaN through a lattice-matched tunnel layer

Electrical spin injection and detection in a semiconductor. Is it feasible?

Spin Pumping and Inverse Rashba-Edelstein Effect in NiFe/Ag/Bi and NiFe/Ag/Sb