Electron spin-orbit splitting in InGaAs/InP quantum well studied by means of the weak antilocalization and spin-zero effects in tilted magnetic fields

S. A. Studenikin,P. T. Coleridge,G. Yu,P. J. Poole
DOI: https://doi.org/10.1088/0268-1242/20/11/001
2005-08-26
Abstract:The coupling between Zeeman spin splitting and Rashba spin-orbit terms has been studied experimentally in a gated InGaAs/InP quantum well structure by means of simultaneous measurements of the weak antilocalization (WAL) effect and beating in the SdH oscillations. The strength of the Zeeman splitting was regulated by tilting the magnetic field with the spin-zeros in the SdH oscillations, which are not always present, being enhanced by the tilt. In tilted fields the spin-orbit and Zeeman splittings are not additive, and a simple expression is given for the energy levels. The Rashba parameter and the electron g-factor were extracted from the position of the spin zeros in tilted fields. A good agreement is obtained for the spin-orbit coupling strength from the spin-zeros and weak antilocalization measurements.
Mesoscale and Nanoscale Physics,Materials Science
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