Abstract:The effects of inversion asymmetry on the anisotropic optical transition in the presence of electric field (Pockels effect) in GaAs/${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$${\mathrm{Al}}_{\mathit{x}}$As quantum wells and superlattices are investigated theoretically. Within an 8\ifmmode\times\else\texttimes\fi{}8 k\ensuremath{\cdot}p effective mass Hamiltonian formalism, in which the linear k, ${\mathit{k}}^{3}$, \ensuremath{\epsilon} (strain due to the piezoelectric effect), \ensuremath{\epsilon}k, and Rashba terms are taken into account, we have derived the renormalized effective Hamiltonian for the electron and hole, respectively. The effects of the inversion asymmetry and the hole mixing on the spin-split subband structures and the dependence of optical transition matrix elements on the polarization of incident light are fully presented. The microscopic model clearly shows that the inversion asymmetry is responsible for the Pockels effect. The roles played by the hole mixing in the enhanced quantum well Pockels effect mediated by the electron-hole pairs are shown by our calculations. Thus, we develop a theory with exciton states with eight spin components (due to the broken twofold degeneracy of the electrons) in the quantum well and calculate the excitonic spectra. The symmetry analysis and numerical results indicate that the excitonic anisotropic behavior results from the interference between different spin components of holes, which, owing to the heavy- and light-hole mixing, is enhanced significantly compared with the bulk material, especially for those exciton states whose dominant component does not coincide with its optically active component. Comparison between theory and experiment is discussed.

Field-Orientation Dependence of the Zeeman Spin Splitting in (in,ga)as Quantum Point Contacts

High Magnetic Field Studies Of Charged Exciton Localization In Gaas/Alxga1-Xas Quantum Wells

In-plane gate induced transition asymmetry of spin-resolved Landau levels in InAs-based quantum wells

The In-Plane Anisotropy of the Effective G Factors in Al0.25Ga0.75N/GaN Based Quantum Point Contacts with Narrow Channels

Quantized Conductance and Large G-Factor Anisotropy in InSb Quantum Point Contacts.

Transconductance and effective Landé factors for quantum point contacts: spin-orbit coupling and interaction effects

Enhanced Anisotropic Effective G Factors of an Al0.25Ga0.75N/GaN Heterostructure Based Quantum Point Contact.

Electron spin-orbit splitting in InGaAs/InP quantum well studied by means of the weak antilocalization and spin-zero effects in tilted magnetic fields

Anamolous conductance plateau in an asymmetrically biased InAs/InAlAs quantum point contact

Edge Mode of Inas/Gasb Quantum Spin Hall Insulator in Magnetic Field

Zeeman Splitting of Excitons in GaAs/AlGaAs Quantum Wells in the Faraday Geometry

Quantized conductance in split gate superconducting quantum point contacts with InGaAs semiconducting two-dimensional electron systems

Composite Fermion States Around the Two-Dimensional Hole Landau Level Filling Factor 32 in Tilted Magnetic Fields

Electric field tunable exchange interaction in InAs/GaAs coupled quantum dots

Exciton Condensation in Landau Levels of Quantum Spin Hall Insulators

Magneto-transport Spectroscopy of the First and Second Two-dimensional Subbands in Al 0.25 Ga 0.75 N/GaN Quantum Point Contacts

Inversion Asymmetry, Hole Mixing, and Enhanced Pockels Effect in Quantum Wells and Superlattices.

Tunable Zero-Field Kondo Splitting in A Quantum Dot

Possible origin of the 0.5 plateau in the ballistic conductance of quantum point contacts

Monte Carlo Simulation of In-Plane Spin-Polarized Transport in GaAs/GaAlAs Quantum Well in the Three-Subband Approximation

Reorientation of quantum Hall stripes within a partially filled Landau level