Abstract:The study aimed to investigate the underlying physics limiting the temperature stability and performance of non-surface passivated Al0.34Ga0.66N/GaN Hall effect sensors, including contacts, under atmospheric conditions. The results obtained from analyzing the microstructural evolution in the Al0.34Ga0.66N/GaN Hall sensor heterostructure were found to correlate with the electrical performance of the Hall effect sensor. High-resolution x-ray photoelectron spectroscopy studies revealed the signature of surface oxidation in the GaN cap layer, as well as a slight out-diffusion of “Al” from the AlGaN barrier layer. To prevent the formation of a bumpy surface morphology at the Ohmic contact, we investigated the impact of “Pt” top Ohmic contacts. The application of a top “Pt” contact stack resulted in a smooth Ohmic contact surface and provided evidence that the bumpy surface morphology in Au-based Ohmic contacts is due to the formation of an Al-Au viscous alloy during rapid thermal annealing. In the early stages of thermal aging, the small drop in contact resistivity stabilized with subsequent thermal aging past the initial 550 h at 200 °C. The outcome is that the Al0.34Ga0.66N/GaN Hall effect sensors, even without surface passivation, exhibited a stable response to applied magnetic fields with no sign of significant degradation after 2800 h of thermal aging at 200 °C under atmospheric conditions. This observed stability in the Hall sensor without surface passivation can be attributed to a self-imposed surface oxidation of the cap layer during the early stages of aging, which serves as a protective layer for the device during subsequent extended periods of thermal aging at 200 °C.

High Temperature Hall Effect Sensors Based On Algan/Gan Heterojunctions

Temperature Dependence of Sensitivity of 2DEG-Based Hall-Effect Sensors

Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor

Temperature Dependence of the Resistance of Algan/Gan Heterostructures and Their Applications As Temperature Sensors

Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors

AlGaN/GaN 2-D Electron Gas for Highly Sensitive and High-Temperature Current Sensing

Observation of the Photoinduced Anomalous Hall Effect in Gan-Based Heterostructures

Effect of Geometry on Sensitivity and Offset of AlGaN/GaN and InAlN/GaN Hall-effect Sensors

High Temperature Performance of GaN and AlxGa1-xN/GaN Heterostructures

High Temperature Performance of GaN and AIxGal-xN/GaN Heterostructures

On-Chip Integrated High-Sensitivity Temperature Sensor Based on p-GaN/AlGaN/GaN Heterostructure

Different Temperature Dependence of Carrier Transport Properties Between Alxga1-Xn/Inyga1-Yn/Gan and Alxga1-Xn/Gan Heterostructures

Sensitivity of Novel Micro-AlN/GaN/AlN Quantum Well Hall Sensors

The design of AlGaN/GaN HEFT-micro-accelerometer and temperature-dependence electrical performance

Experimental investigation on the effect of temperature on the frequency limit of GaAs-AlGaAs and AlGaN-GaN 2DEG Hall-effect sensors

High Temperature Dependence of the Density of Two-Dimensional Electron Gas in Al 0.18 Ga 0.82 N/GaN Heterostructures

Low power AlGaN/GaN MEMS pressure sensor for high vacuum application

Influence of Algan/Gan Interface Polarization Fields on the Properties of Photoconductive Detectors

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

High-Temperature Hall Effect Sensor Based on Epitaxial Graphene on High-Purity Semiinsulating 4H-SiC

Measurement of piezoresistance coefficient with different gate voltages of GaN HEMT micro-accelerometer