The design of AlGaN/GaN HEFT-micro-accelerometer and temperature-dependence electrical performance

Ting Liang,Jianjun Tang,Qianqian Zhang,Yong Wang,Jing Li,Jun Liu,Jijun Xiong
DOI: https://doi.org/10.4028/www.scientific.net/KEM.483.174
2011-01-01
Key Engineering Materials
Abstract:In this paper, We use a novel principle to detect acceleration and report how characteristics and piezoresistance coefficient of AlGaN/GaN HEFT-micro-accelerometer are affected by setting different temperatures. It is shown that saturation current of device would go down if the temperature goes up, which is about 0.028mA/degrees C, based on the research. However, the device can work well at the temperature range of -50 degrees C to 50 degrees C, which indicates that it can work safely in the larger temperature range.
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