The research of piezoresistive effect in different temperature based on AlGaN/GaN HEFT-micro-accelerometer

Jianjun Tang,Ting Liang,Qianqian Zhang,Yong Wang,Weili Shi,Jie Wang,Jijun Xiong
DOI: https://doi.org/10.1109/ICSICT.2010.5667489
2010-01-01
Abstract:In this paper, we use a novel way to research the piezoresistance coefficients of AlGaN/GaN HEFT affected by the changes of temperatures in the structure of micro-accelerometer. It is shown that saturation current of HEFT would decrease with the increasing temperature, which is about 0.028mA/°C. However, the device can work well at the temperature range of -50°C to 50°C, which indicates that it can work safely in the larger temperature range. Additional we find that the piezoresistance coefficient of HEFT is declined by the simultaneous increase in the temperature.
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