Abstract:The study aimed to investigate the underlying physics limiting the temperature stability and performance of non-surface passivated Al0.34Ga0.66N/GaN Hall effect sensors, including contacts, under atmospheric conditions. The results obtained from analyzing the microstructural evolution in the Al0.34Ga0.66N/GaN Hall sensor heterostructure were found to correlate with the electrical performance of the Hall effect sensor. High-resolution x-ray photoelectron spectroscopy studies revealed the signature of surface oxidation in the GaN cap layer, as well as a slight out-diffusion of “Al” from the AlGaN barrier layer. To prevent the formation of a bumpy surface morphology at the Ohmic contact, we investigated the impact of “Pt” top Ohmic contacts. The application of a top “Pt” contact stack resulted in a smooth Ohmic contact surface and provided evidence that the bumpy surface morphology in Au-based Ohmic contacts is due to the formation of an Al-Au viscous alloy during rapid thermal annealing. In the early stages of thermal aging, the small drop in contact resistivity stabilized with subsequent thermal aging past the initial 550 h at 200 °C. The outcome is that the Al0.34Ga0.66N/GaN Hall effect sensors, even without surface passivation, exhibited a stable response to applied magnetic fields with no sign of significant degradation after 2800 h of thermal aging at 200 °C under atmospheric conditions. This observed stability in the Hall sensor without surface passivation can be attributed to a self-imposed surface oxidation of the cap layer during the early stages of aging, which serves as a protective layer for the device during subsequent extended periods of thermal aging at 200 °C.

Sensitivity of Novel Micro-AlN/GaN/AlN Quantum Well Hall Sensors

Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor

Effect of Geometry on Sensitivity and Offset of AlGaN/GaN and InAlN/GaN Hall-effect Sensors

AlGaN/GaN Heterostructures for Non-Invasive Cell Electrophysiological Measurements.

High Temperature Hall Effect Sensors Based On Algan/Gan Heterojunctions

AlGaN/GaN 2-D Electron Gas for Highly Sensitive and High-Temperature Current Sensing

Temperature Dependence of Sensitivity of 2DEG-Based Hall-Effect Sensors

Optimization of Gate Geometry Towards High-Sensitivity AlGaN/GaN Ph Sensor

Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors

High Sensitive pH Sensor Based on AlInN/GaN Heterostructure Transistor.

Measurement of piezoresistance coefficient with different gate voltages of GaN HEMT micro-accelerometer

Observation of the Photoinduced Anomalous Hall Effect in Gan-Based Heterostructures

High Sensitive pH Sensor Based on AlInN/GaN Heterostructure Transistor

Influence of the Ratio of Gate Length to Source-Drain Distance on the Sensitivity of the AlGaN/GaN HEMT Based Chemical Sensors and Biosensors

The Sensing Mechanism of InAlN/GaN HEMT

Low power AlGaN/GaN MEMS pressure sensor for high vacuum application

Characteristics of AlGaN/GaN High Electron Mobility Transistor Temperature Sensor

Enhanced Sensitivity Pt/AlGaN/GaN Heterostructure NO₂ Sensor Using a Two-Step Gate Recess Technique

Planar Dual Gate GaN HEMT Cascode Amplifier As a Voltage Readout Ph Sensor with High and Tunable Sensitivities

Ph Sensor Based on an AlGaN/GaN HEMT Structure

Temperature Dependence of the Resistance of Algan/Gan Heterostructures and Their Applications As Temperature Sensors