Reduced thermal conductivity of epitaxial GaAs on Si due to symmetry-breaking biaxial strain

Alejandro Vega-Flick,Daehwan Jung,Shengying Yue,John E. Bowers,Bolin Liao

DOI: https://doi.org/10.1103/PhysRevMaterials.3.034603

2019-01-11

Abstract:Epitaxial growth of III-V semiconductors on Si is a promising route for silicon photonics. Threading dislocations and the residual thermal stress generated during growth are expected to affect the thermal conductivity of the III-V semiconductors, which is crucial for efficient heat dissipation from photonic devices built on this platform. In this work, we combine a non-contact laser-induced transient thermal grating technique with ab initio phonon simulations to investigate the in-plane thermal transport of epitaxial GaAs-based buffer layers on Si, employed in the fabrication of III-V quantum dot lasers. Surprisingly, we find a significant reduction of the in-plane thermal conductivity of GaAs, up to 19%, as a result of a small in-plane biaxial stress of 250 MPa. Using ab initio phonon calculations, we attribute this effect to the enhancement of phonon-phonon scattering caused by the in-plane biaxial stress, which breaks the cubic crystal symmetry of GaAs. Our results indicate the importance of eliminating the residual thermal stress in the epitaxial III-V layers on Si to avoid the reduction of thermal conductivity and facilitate heat dissipation. Additionally, our results showcase potential means of effectively controlling thermal conductivity of solids with external strain/stress.

Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is the influence of the residual thermal stress on the thermal conductivity of III - V semiconductor materials (such as GaAs) epitaxially grown on a silicon substrate due to lattice mismatch and thermal expansion coefficient mismatch. Specifically, the research focuses on how this residual thermal stress significantly reduces the in - plane thermal conductivity of GaAs, and further affects the thermal management performance of photonic devices constructed from these materials. By combining non - contact laser - induced transient thermal grating technology with ab - initio phonon simulations, the authors explored the specific influence mechanism of in - plane biaxial stress on the thermal conductivity of GaAs, especially how this stress enhances phonon - phonon scattering by breaking the cubic crystal symmetry, thereby leading to a decrease in thermal conductivity. The main findings of the paper include: - When the in - plane biaxial stress is approximately 250 MPa, the in - plane thermal conductivity of GaAs can be reduced by up to 19%. - The experimental results were verified by theoretical calculations, indicating that under the same conditions, the in - plane thermal conductivity of GaAs can be theoretically reduced by approximately 21%. - This reduction in thermal conductivity is mainly due to the destruction of crystal symmetry caused by in - plane biaxial stress, which enhances the scattering rate of low - frequency acoustic phonons. These findings are of great significance for improving the thermal management of III - V semiconductor materials on silicon - based photonic integrated circuits, and may provide a new approach for effectively controlling the thermal conductivity of solid materials through external strain/stress.

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