Abstract:GaAs based structures in which are embedded InAs self-assembled quantum dots are studied using admittance measurements taken over a large frequency spectrum and for several temperatures. The presence of quantum dots is evidenced in the capacitance-voltage characteristics by one, or more, plateau- like structures related to the processes of charging and discharging of the quantum dots. Concurrently, the measured conductance exhibits a peak in a certain bias range that coincides with the plateau-like structure in the capacitance but only for temperatures below 150 K. The conductance dependence on both the temperature and applied bias is attributed to two mechanisms of carrier escape/capture mechanisms from the InAs embedded quantum dots into/out of the hosting GaAs; a thermally activated process for temperatures above 80 K and a perceptibly nonthermal tunneling process for temperatures below 40 K. The conductance data is used to estimate rates and activation energies in association with the electron escape mechanisms from the quantum dots. (C) 2012 Society of Photo-Optical Instrumentation Engineers (SPIE). [DOI: 10.1117/1.JNP.6.063502]

Far-infrared photoconductivity in self-organized InAs quantum dots

Mid-infrared photoconductivity in InAs quantum dots

Multi-color Photoresponse Based on Interband and Intersubband Transitions in InAs and InGaAs Quantum Dot Photodetectors

Anisotropic Photoconductivity of InGaAs Quantum Dot Chains Measured by Terahertz Pulse Spectroscopy

Photovoltage and Photoreflectance Spectroscopy of Inas/Gaas Self-Organized Quantum Dots

Electrical Characteristics of InAs Self-Assembled Quantum Dots Embedded in GaAs Using Admittance Spectroscopy

Broadband Photoresponse from Inas Quantum Dots Embedded in A Graded Well for Visible to Mid-Infrared Detection

Polarization Dependence of Intraband Absorption in Self-Organized Quantum Dots

Electronic and Structural Properties of Interdiffused Self-Assembled Quantum Dots from Magneto-Photoluminescence

Dual Broadband Photodetector Based on Interband and Intersubband Transitions in InAs Quantum Dots Embedded in Graded InGaAs Quantum Wells

Conduction Band Spectra in Self-Assembled Inas/Gaas Dots: A Comparison of Effective Mass and an Eight-Band Approach

Observation of In‐plane Polarized Intersublevel Absorption in Strongly Coupled InGaAs/GaAs Self Assembled Quantum Dots

Room Temperature Near-Infrared Photoresponse Based on Interband Transitions in <formula formulatype="inline"> <tex>$\hbox{In}_{0.35}\hbox{Ga}_{0.65}\hbox{As}$</tex></formula> Multiple Quantum Dot Photodetector

Structural and Infrared Absorption Properties of Self-Organized InGaAs/GaAs Quantum Dots Multilayers

Interband Transition Distributions in the Optical Spectra of Inas/Gaas Self-Assembled Quantum Dots

InAs/AlxGa1−xAs Quantum Dot Infrared Photodetectors with Undoped Active Region

Photoluminescence Properties of Self-Assembled Inas Quantum Dots Grown on Inp Substrates by Solid Source Molecular Beam Epitaxy

Characteristic Study of Inas Self-Assembled Quantum Dots on Gaas/Inp

Atomistic pseudopotential calculations of the optical properties of InAs/InP self-assembled quantum dots

Charged exciton emission at 1.3 $μ$m from single InAs quantum dots grown by metalorganic chemical vapor deposition

Near Infrared Broadband Emission of In0.35ga0.65as Quantum Dots on High Index Gaas Surfaces