Abstract:Silicon-compatible short- and mid-wave infrared emitters are highly sought-after for on-chip monolithic integration of electronic and photonic circuits to serve a myriad of applications in sensing and communication. To address this longstanding challenge, GeSn semiconductors have been proposed as versatile building blocks for silicon-integrated optoelectronic devices. In this regard, this work demonstrates light-emitting diodes (LEDs) consisting of a vertical PIN double heterostructure p-Ge$_{0.94}$Sn$_{0.06}$/i-Ge$_{0.91}$Sn$_{0.09}$/n-Ge$_{0.95}$Sn$_{0.05}$ grown epitaxially on a silicon wafer using germanium interlayer and multiple GeSn buffer layers. The emission from these GeSn LEDs at variable diameters in the 40-120 $\mu$m range is investigated under both DC and AC operation modes. The fabricated LEDs exhibit a room temperature emission in the extended short-wave range centered around 2.5 $\mu$m under an injected current density as low as 45 A/cm$^2$. By comparing the photoluminescence and electroluminescence signals, it is demonstrated that the LED emission wavelength is not affected by the device fabrication process or heating during the LED operation. Moreover, the measured optical power was found to increase monotonically as the duty cycle increases indicating that the DC operation yields the highest achievable optical power. The LED emission profile and bandwidth are also presented and discussed.

Direct and indirect band gap room temperature electroluminescence of Ge diodes

Direct-Bandgap Electroluminescence from Germanium with Subband Engineering Utilizing a Metal-Oxide-Semiconductor Structure

Direct-bandgap light-emitting germanium in tensilely strained nanomembranes

Direct bandgap emission from strain-doped germanium

Germanium crystals on silicon show their light

Strain-Induced Enhancement of Electroluminescence from Highly Strained Germanium Light-Emitting Diodes

Grating and Hole-Array Enhanced Germanium Lateral P-I-n Photodetectors on an Insulator Platform

Band gap narrowing and doping level of heavily doped Germanium nanocrystals deduced from photoconductivity studies

Direct-bandgap emission from hexagonal Ge and SiGe alloys

Continuous-wave GeSn light emitting diodes on silicon with $2.5 \, μ$m room-temperature emission

Light-emitting diodes with Ge(Si) nanoislands embedded in photonic crystals

Electron-beam-induced current evidence for room-temperature photoluminescence of silicon pn diode

Tensile-strained germanium microdisk electroluminescence

Germanium Photodetector with Enhanced Photo-response at the L-band and Beyond for Integrated Photonic Applications

Direct Bandgap Light Emission from Strained Ge Nanowires Coupled with High-Q Optical Cavities

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

A group-IV double heterostructure light emitting diode for room temperature gain in Silicon

Germanium based photonic components toward a full silicon/germanium photonic platform

Efficient room-temperature light-emitters based on partly amorphised Ge quantum dots in crystalline Si

Towards low energy consumption integrated photonic circuits based on Ge/SiGe quantum wells

Impact of the Ge-Si interfacial barrier on the temperature-dependent performance of PureGaB Ge-on-Si p?^+?n photodiodes