Abstract:Monolayer germanium sulfide is gaining significant attention for its exceptional anisotropic electronic conductance, notable excitonic effects, and wide range of potential applications. In our study, we used density functional theory, many-body perturbation theory, and non-equilibrium Green function to investigate electronic transport properties and exciton radiative lifetime of single-layer germanium sulfide. Our theoretical findings showed that applying up to 8 percent compressive strain increased carrier mobility by nearly threefold, and thus, dramatically enhance the device's current intensity. Moreover, we observed that strain engineering allowed fine-tuning of the electron-hole recombination time. At 6 percent tensile strain, the effective radiative lifetime was as short as 19 picoseconds, which is 4.5 times faster than the intrinsic state and 80 times faster than at 8 percent compressive strain. These results highlight the potential of strain engineering to customize the electronic and optical properties of GeS monolayer for specific electronic, optoelectronic, and photovoltaic device requirements

What problem does this paper attempt to address?

The paper primarily explores the electronic transport properties and exciton radiative lifetime of a single-layer germanium sulfide (GeS monolayer) under different strain conditions. By employing Density Functional Theory (DFT), Many-Body Perturbation Theory (MBPT), and Non-Equilibrium Green's Function (NEGF) methods, the researchers simulated and analyzed the property changes of the GeS monolayer under compressive and tensile strain. ### Main Issues Studied 1. **Electronic Transport Properties**: The study investigates the carrier mobility of the GeS monolayer under different strain conditions and its impact on device current intensity. The paper points out that under 8% compressive strain, the carrier mobility can be nearly tripled, significantly enhancing the device's current intensity. 2. **Exciton Radiative Lifetime**: The research explores how strain engineering affects the electron-hole recombination time of excitons. It was found that under 6% tensile strain, the effective radiative lifetime is shortened to 19 picoseconds, which is 4.5 times faster than in the unstrained state and 80 times faster than under 8% compressive strain. ### Core Contributions - **Strain Regulation**: The study demonstrates that strain engineering can effectively modulate the electronic and optical properties of the GeS monolayer, which is of great significance for customizing specific electronic, optoelectronic, and photovoltaic device applications. - **Theoretical Predictions**: The theoretical calculation methods used in the study can predict key physical parameters of the GeS monolayer under different strain conditions, such as electronic bandgap, carrier mobility, and exciton radiative lifetime. In summary, this research aims to utilize strain engineering to regulate the electronic and optical properties of GeS monolayer materials to meet the needs of different types of electronic devices, providing a theoretical foundation and technical guidance for the development of high-performance semiconductor applications.

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