Abstract:Solution processed field-effect transistors based on single crystalline silicon nanowires (Si NWs) with metal Schottky contacts are demonstrated. The semiconducting layer was deposited from a nanowire ink formulation at room temperature. The devices with 230nm thick SiO2 gate insulating layers show excellent output current-voltage characteristics with early saturation voltages under 2 volts, constant saturation current and exceptionally low dependence of saturation voltage with the gate field. Operational principles of these devices are markedly different from traditional ohmic-contact field-effect transistors (FETs), and are explained using the source-gated transistor (SGT) concept in which the semiconductor under the reverse biased Schottky source barrier is depleted leading to low voltage pinch-off and saturation of drain current. Device parameters including activation energy are extracted at different temperatures and gate voltages to estimate the Schottky barrier height for different electrode materials to establish transistor performance - barrier height relationships. Numerical simulations are performed using 2D thin-film approximation of the device structures at various Schottky barrier heights. Without any adjustable parameters and only assuming low p-doping of the transistor channel, the modelled data show exceptionally good correlation with the measured data. From both experimental and simulation results, it is concluded that source-barrier controlled nanowire transistors have excellent potential advantages compared with a standard FET including mitigation of short-channel effects, insensitivity in device operating currents to device channel length variation, higher on/off ratios, higher gain, lower power consumption and higher operational speed for solution processable and printable nanowire electronics.

Vertical Silicon Nanowire CMOS Inverter

CMOS compatible Gate-All-Around Vertical silicon-nanowire MOSFETs

Fabrication and Characterization of Poly-Si Vertical Nanowire Thin Film Transistor

Vertically Stacked and Independently Controlled Twin-Gate MOSFETs on a Single Si Nanowire

Vertical InAs Nanowire MOSFETs with ID<inf>S</inf> = 1.34 Ma/&#x00b5;m and G<inf>m</inf> = 1.19 Ms/&#x00b5;m at VD<inf>S</inf> = 0.5 V

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Realization of Ni Fully Silicided Gate on Vertical Silicon Nanowire MOSFETs for Adjusting Threshold Voltage $({V}_{T})$

Fully Gate-All-Around Silicon Nanowire Cmos Devices

Si-Nanowire Cmos Inverter Logic Fabricated Using Gate-All-Around (gaa) Devices and Top-Down Approach

High-Performance Poly-Si Vertical Nanowire Thin-Film Transistor and the Inverter Demonstration

Single-Nanowire Cmos Inverter Based on Ambipolar Si Nanowire Fets

Dual Nanowire Pmosfet With Thin Si Bridge And Tan Gate

Enhanced Device Performance with Vertical SiC Gate-All-Around Nanowire Power MOSFETs

Nickel-Silicided Schottky Junction CMOS Transistors With Gate-All-Around Nanowire Channels

Dual Nanowire Silicon MOSFET With Silicon Bridge and TaN Gate

Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si.

High-performance Fully Depleted Silicon Nanowire (diameter /spl Les/ 5 Nm) Gate-All-around CMOS Devices

Si Nanowire - Array Source Gated Transistors

First Demonstration of Novel Vertical Gate-All-Around Field-Effect-Transistors Featured by Self-Aligned and Replaced High-κ Metal Gates

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Si Nanowire CMOS Transistors and Circuits by Top-Down Technology Approach