Abstract:Engineering materials at the nanoscale by combining controlled nanomaterial synthesis and directed assembly methods offers the potential to create new electronic and optical devices with improved performance and functionality. Semiconductor nanowires have been of particular interest as a model system for studying new physical phenomena arising from their scaled geometries as well as for applications in high performance vertical transistors, thin film electronic, electro-optical, and sensing devices and circuits. However, the use of relatively immature nanowire growth, in-situ doping, and device integration processes have made it difficult to elucidate and compare the electrical transport properties across different device platforms (e.g., nanowire versus planar) and length scales. This talk will describe recent results showing that thermally-oxidized in-situ axially-doped n+-p--n+ and p+-n--p+ silicon nanowires (20 to 50 run in diameter) grown by the vapor-liquid-solid technique can be used to fabricate stable and reproducible n- and p-channel top-gate and wrap-around-gate field effect transistors (FETs) that operate by inversion ofthe channel and have both high on-state current (Ion) and on/off-state current ratio (Ion/Ioff). Control measurements using back-gated device structures that separately probe the properties of the heavily-doped source/drain regions and lightly-doped channel region confirm that radial thin film deposition on the channel is prevented during vapor-liquid-solid growth of the second heavily-doped nanowire segment, which is necessary for fabricating complementary field effect transistors using these silicon nanowires. The effective mobility estimated from the measured channel resistance of n+-p--n+ and p+-n--p+ silicon nanowire FETs having 1 ?m-long channels will be provided and related to planar devices. Finally, the properties of the top-gate and wrap-around-gate n- and p-channel silicon nanowire FETs will be compared as a function of global back gate bias.

Demonstration of Schottky Barrier NMOS Transistors with Erbium Silicided Source/Drain and Silicon Nanowire Channel

Erbium silicided Schottky Source/Drain Silicon Nanowire N-Metal–Oxide–Semiconductor Field-Effect Transistors

Erbium/Platinum Silicided Gate-All-Around Silicon Nanowire Schottky Source/Drain MOSFETs

Nickel-Silicided Schottky Junction CMOS Transistors With Gate-All-Around Nanowire Channels

Si Nanowire - Array Source Gated Transistors

Schottky-Barrier Si Nanowire MOSFET: Effects of Source/Drain Metals and Gate Dielectrics

Dual Nanowire Pmosfet With Thin Si Bridge And Tan Gate

Multiple Schottky Barrier-Limited Field-Effect Transistors on a Single Silicon Nanowire with an Intrinsic Doping Gradient

Axially-doped n+-p−-n+ and p+-n−-p+ silicon nanowires: vapor-liquid-solid growth and field effect transistor characterization

Dopant-Segregated Ni-Silicide Schottky-Source/Drain CMOS on Strained-Si/SiGe Multiple Quantum-Well Channel on Bulk-Si

Demonstration of 40-Nm Channel Length Top-Gate P-Mosfet of WS2 Channel Directly Grown on SiO$_{{x}}$ /si Substrates Using Area-Selective CVD Technology

N-channel FinFETs with 25-Nm Gate Length and Schottky-Barrier Source and Drain Featuring Ytterbium Silicide

Vertical Silicon Nanowire CMOS Inverter

Omega-Gate P-Mosfet with Nanowirelike Sige/Si Core/Shell Channel

New Observation On Gate-Induced Drain Leakage In Silicon Nanowire Transistors With Epi-Free Cmos Compatible Technology On Soi Substrate

Demonstration of Tunneling FETs Based on Highly Scalable Vertical Silicon Nanowires

Excimer laser-annealed dopant segregated Schottky (ELA-DSS) Si nanowire gate-all-around (GAA) pFET with near zero effective Schottky barrier height (SBH)

Dual Nanowire Silicon MOSFET With Silicon Bridge and TaN Gate

Top-gated field effect devices using oxidized silicon nanowires

In situ axially doped n-channel silicon nanowire field-effect transistors.

Performance Investigation on P-Type Si-, Ge-, and Ge–Si Core–Shell Nanowire Schottky Barrier Transistors