Abstract:Solution processed field-effect transistors based on single crystalline silicon nanowires (Si NWs) with metal Schottky contacts are demonstrated. The semiconducting layer was deposited from a nanowire ink formulation at room temperature. The devices with 230nm thick SiO2 gate insulating layers show excellent output current-voltage characteristics with early saturation voltages under 2 volts, constant saturation current and exceptionally low dependence of saturation voltage with the gate field. Operational principles of these devices are markedly different from traditional ohmic-contact field-effect transistors (FETs), and are explained using the source-gated transistor (SGT) concept in which the semiconductor under the reverse biased Schottky source barrier is depleted leading to low voltage pinch-off and saturation of drain current. Device parameters including activation energy are extracted at different temperatures and gate voltages to estimate the Schottky barrier height for different electrode materials to establish transistor performance - barrier height relationships. Numerical simulations are performed using 2D thin-film approximation of the device structures at various Schottky barrier heights. Without any adjustable parameters and only assuming low p-doping of the transistor channel, the modelled data show exceptionally good correlation with the measured data. From both experimental and simulation results, it is concluded that source-barrier controlled nanowire transistors have excellent potential advantages compared with a standard FET including mitigation of short-channel effects, insensitivity in device operating currents to device channel length variation, higher on/off ratios, higher gain, lower power consumption and higher operational speed for solution processable and printable nanowire electronics.

Fully Gate-All-Around Silicon Nanowire Cmos Devices

Silicon Nanowire Field Effect Devices By Top-Down CMOS Technology

High-performance Fully Depleted Silicon Nanowire (diameter /spl Les/ 5 Nm) Gate-All-around CMOS Devices

Si Nanowire CMOS Transistors and Circuits by Top-Down Technology Approach

CMOS compatible Gate-All-Around Vertical silicon-nanowire MOSFETs

Si-Nanowire Cmos Inverter Logic Fabricated Using Gate-All-Around (gaa) Devices and Top-Down Approach

Gate-All-Around Silicon Nanowire Devices: Are These The Future Of Cmos?

Vertical Silicon Nanowire CMOS Inverter

High-Performance Silicon Nanowire Gate-All-Around Nmosfets Fabricated on Bulk Substrate Using CMOS-Compatible Process

Semiconductor Nanowire MOSFETs and Applications

Nickel-Silicided Schottky Junction CMOS Transistors With Gate-All-Around Nanowire Channels

Three Dimensionally Stacked Sige Nanowire Array And Gate-All-Around P-Mosfets

Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors

Performance Breakthrough in Gate-All-Around Nanowire N- and P-Type MOSFETs Fabricated on Bulk Silicon Substrate

Room. Temperature Coulomb Blockade Oscillations In Gate-All-Around Silicon Nanowire (Radius Similar To 2nm) N-M Sfets

Nanotube and Nanowire Transistors

Dual Nanowire Silicon MOSFET With Silicon Bridge and TaN Gate

Dual Nanowire Pmosfet With Thin Si Bridge And Tan Gate

Si Nanowire - Array Source Gated Transistors

DC baseband and high-frequency characteristics of a silicon nanowire field effect transistor circuit

CMOS compatible Ge/Si core/shell nanowire gate-all-around pMOSFET integrated with HfO2/TaN gate stack