Abstract:Solution processed field-effect transistors based on single crystalline silicon nanowires (Si NWs) with metal Schottky contacts are demonstrated. The semiconducting layer was deposited from a nanowire ink formulation at room temperature. The devices with 230nm thick SiO2 gate insulating layers show excellent output current-voltage characteristics with early saturation voltages under 2 volts, constant saturation current and exceptionally low dependence of saturation voltage with the gate field. Operational principles of these devices are markedly different from traditional ohmic-contact field-effect transistors (FETs), and are explained using the source-gated transistor (SGT) concept in which the semiconductor under the reverse biased Schottky source barrier is depleted leading to low voltage pinch-off and saturation of drain current. Device parameters including activation energy are extracted at different temperatures and gate voltages to estimate the Schottky barrier height for different electrode materials to establish transistor performance - barrier height relationships. Numerical simulations are performed using 2D thin-film approximation of the device structures at various Schottky barrier heights. Without any adjustable parameters and only assuming low p-doping of the transistor channel, the modelled data show exceptionally good correlation with the measured data. From both experimental and simulation results, it is concluded that source-barrier controlled nanowire transistors have excellent potential advantages compared with a standard FET including mitigation of short-channel effects, insensitivity in device operating currents to device channel length variation, higher on/off ratios, higher gain, lower power consumption and higher operational speed for solution processable and printable nanowire electronics.

Room. Temperature Coulomb Blockade Oscillations In Gate-All-Around Silicon Nanowire (Radius Similar To 2nm) N-M Sfets

Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors

Performance Limit of Gate-All-Around Si Nanowire Field-Effect Transistors: an Ab Initio Quantum Transport Simulation

Si Nanowire - Array Source Gated Transistors

Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs

Observation of Coulomb-blockade in a field-effect transistor with silicon nanocrystal floating gate at room temperature

Dual Operation of Gate-All-Around Silicon Nanowires at Cryogenic Temperatures: FET and Quantum Dot

Symmetric and Excellent Scaling Behavior in Ultrathin n‐ and p‐Type Gate‐All‐Around InAs Nanowire Transistors

Symmetric and Excellent Scaling Behavior in Ultrathin <i>n</i>‐ and <i>p</i>‐Type Gate‐All‐Around InAs Nanowire Transistors

DC and Analog/RF Performance Evaluation Using Dual Metal Gate Work Function Engineering of Junctionless Cylindrical Gate All Around Si Nanowire MOSFET Using NEGF Approach for Upcoming Sub 5 nm Technology Node

Classical Coulomb Blockade of A Silicon Nanowire Dot

New Observation On Gate-Induced Drain Leakage In Silicon Nanowire Transistors With Epi-Free Cmos Compatible Technology On Soi Substrate

Suspended Inasnanowire Gate-All-Around Field-Effect Transistors

20&Amp;#x2013;80nm Channel Length InGaAs Gate-All-around Nanowire MOSFETs with EOT&#x003D;1.2nm and Lowest SS&#x003D;63mV/dec

Gallium Nitride Nanowire Nanodevices

Sub-5 nm Gate-All-Around InP Nanowire Transistors Towards High-Performance Devices

p-GaAs nanowire MESFETs with near-thermal limit gating

Impact of Gate Dielectric Geometry on the Nanowire MOSFETs Performance and Scaling

Gate-all-around NWFETs vs. triple-gate FinFETs: Junctionless vs. extensionless and conventional junction devices with controlled EWF modulation for multi-VT CMOS

Room Temperature Electron Tunneling and Storage in a Nanocrystalline Silicon Floating Gate Structure

Investigation of 4H-SiC gate-all-around cylindrical nanowire junctionless MOSFET including negative capacitance and quantum confinements