Abstract:Difficulties in obtaining high-performance p-type transistors and gate insulator charge-trapping effects present two major challenges for III-V complementary metal-oxide semiconductor (CMOS) electronics. We report a p-GaAs nanowire metal-semiconductor field-effect transistor (MESFET) that eliminates the need for a gate insulator by exploiting the Schottky barrier at the metal-GaAs interface. Our device beats the best-performing p-GaSb nanowire metal-oxide-semiconductor field effect transistor (MOSFET), giving a typical sub-threshold swing of 62 mV/dec, within 4% of the thermal limit, on-off ratio $\sim 10^{5}$, on-resistance ~700 k$\Omega$, contact resistance ~30 k$\Omega$, peak transconductance 1.2 $\mu$S/$\mu$m and high-fidelity ac operation at frequencies up to 10 kHz. The device consists of a GaAs nanowire with an undoped core and heavily Be-doped shell. We carefully etch back the nanowire at the gate locations to obtain Schottky-barrier insulated gates whilst leaving the doped shell intact at the contacts to obtain low contact resistance. Our device opens a path to all-GaAs nanowire MESFET complementary circuits with simplified fabrication and improved performance.

What problem does this paper attempt to address?

The main problems that this paper attempts to solve are the low performance of p - type transistors and the charge - trapping effect in the gate insulator in III - V complementary metal - oxide - semiconductor (CMOS) electronic devices. Specifically: 1. **Preparation of high - performance p - type transistors**: Compared with n - type transistors, the progress of p - type transistors in III - V nanowire CMOS is relatively slow, mainly due to the lower intrinsic carrier mobility and the difficulties in growth, doping, and manufacturing high - quality gates and ohmic contacts. 2. **Elimination of the gate insulator charge - trapping effect**: Traditional metal - oxide - semiconductor field - effect transistors (MOSFETs) rely on the gate insulating layer to control the channel current, but this insulating layer is prone to cause the charge - trapping effect, which in turn affects device performance. To solve these problems, the author developed a metal - semiconductor field - effect transistor (MESFET) based on p - GaAs nanowires. By using the Schottky barrier at the GaAs - metal interface to achieve gate control without an additional gate insulating layer. This method not only simplifies the manufacturing process but also significantly improves device performance. ### Specific contributions - **Excellent sub - threshold swing**: A sub - threshold swing of 62 mV/dec was achieved, which is close to the thermal limit (59.6 mV/dec) and better than the existing p - GaSb nanowire MOSFETs. - **High on - off ratio**: An on - off ratio of approximately $10^5$ was obtained. - **Low contact resistance**: The contact resistance is approximately 30 kΩ. - **High - frequency operation**: It can perform high - fidelity AC operations at frequencies up to 110 kHz. - **Strong gate - control ability**: By precisely controlling the etching depth of the Be - doped shell layer, effective gate control was achieved while maintaining low contact resistance. These improvements make the p - GaAs nanowire MESFET comparable in performance to the existing p - GaSb nanowire MOSFETs, and it has higher reliability and a simpler manufacturing process. In addition, this research also makes it possible to construct all - GaAs nanowire complementary circuits in the future.

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