Three Dimensionally Stacked Sige Nanowire Array And Gate-All-Around P-Mosfets

L. K. Bera,H. S. Nguyen,N. Singh,T. Y. Liow,D. X. Huang,K. M. Hoe,C. H. Tung,W. W. Fang,S. C. Rustagi,Y. Jiang,G. Q. Lo,N. Balasubramanian,D. L. Kwong

DOI: https://doi.org/10.1109/IEDM.2006.346841

2006-01-01

Abstract:A novel method for realizing arrays of vertically stacked (e.g., x3 wires stacked) laterally spread out nanowires is presented for the first time using a fully Si-CMOS compatible process. The Gate-All-Around (GAA) MOSFET devices using these nanowire arrays show excellent performance in terms of near ideal sub-threshold slope (< 70 mV/dec), high I-on,,/I-off ratio (similar to 10(7)), and low leakage current. Vertical stacking economizes on silicon estate and improves the on-state I-DSAT at the same time. Both n- and p-FET devices are demonstrated.