Abstract:Over the past few years tremendous progress has been made on the process, application, device physics and compact modeling of nanowire MOSFETs. We would like to review the above aspects of silicon-based nanowire, focusing on its crucial compact models and the circuit performance demonstration based on our group research work and understanding on nanowire MOSFET progress. Nanowire MOSFETs are recognized as one of the most promising candidates to extend Moore’s law into nanoelectronics era. Both the top-down (Singh et al., 2008) and bottom-up (Lu & Lieber, 2006) approaches are widely studied to prepare ultra small nanowire. With bottom-up method, nanowires are generally synthesized by using metal nanoclusters as catalysts via a vapor-liquid-solid process (Lu & Lieber, 2006). After growth nanowires are transferred to silicon substrate to form FET structure. With top-down technique there are various fabrication approaches, such as hard mask trimming, etching in H2 ambient and stress limited oxidation (Singh et al., 2008). 5-nm gate length device has been demonstrated (Liow et al., 2008). Nanowire MOSFETs prepared with both methods find application in logic circuits (Singh et al., 2008), memory (Singh et al., 2008) and sensors (Stern et al., 2008). Due to the quantum confinement in cross section of nanowire MOSFETs, especially of nanowires with diameter smaller than 15nm, electron mobility behaves differently from its bulk counterpart. Phonon-limited electron mobility decreases with reducing the wire size (Kotlyar et al., 2004) while total electron mobility is enhanced due to volume inversion at high transverse field (Jin et al., 2007). Although whether or not ballistic transport can occur in the silicon nanowire MOSFETs with ultrasmall channel length is disputable (Ferry et al., 2008), it deserves our attention. In the ballistic transport regime, carrier scattering in the device channel is totally suppressed. The study of ballistic transport in nanowire MOSFETs provides the upper limit to their performances. Under extreme scaling of nanowire MOSFETs, the atoms in nanowire cross section are countable. It is believed that the change in bandstructure of one dimensional nanowire influences the device performances (Neophytou et al., 2008). The above mentioned phenomenon are studied and simulated with various numerical approaches and also need to be accounted for in the advanced compact models.

Gate-All-Around Silicon Nanowire Devices: Are These The Future Of Cmos?

Silicon-Based Nanowire Mosfets: From Process And Device Physics To Simulation And Modeling

Investigation of Gate-All-around Silicon Nanowire Transistors for Ultimately Scaled CMOS Technology from Top-Down Approach

One-dimensional Germanium Nanowires for Future Electronics

Semiconductor Nanowire MOSFETs and Applications

A Compact Model of Silicon-Based Nanowire Field Effect Transistor for Circuit Simulation and Design

Nanotube and Nanowire Transistors

Anisotropy Enhancing Vertically Aligned Silicon-Germanium Nanowire

Impact of Gate Dielectric Geometry on the Nanowire MOSFETs Performance and Scaling

Enhanced Device Performance with Vertical SiC Gate-All-Around Nanowire Power MOSFETs

III-V Gate-all-around Nanowire MOSFET Process Technology: from 3D to 4D

3-D matrix nano-wire transistor fabrication on silicon substrate

Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors

A method for producing surround gate silicon nanowire transistor with air as the side wall

Characterization And Analysis Of Gate-All-Around Si Nanowire Transistors For Extreme Scaling

Si Nanowire - Array Source Gated Transistors

Toward monolithic growth integration of nanowire electronics in 3D architecture: a review

New Observation On Gate-Induced Drain Leakage In Silicon Nanowire Transistors With Epi-Free Cmos Compatible Technology On Soi Substrate

Fabrication and Transport Behavior Investigation of Gate-All-Around Silicon Nanowire Transistor from Top-Down Approach

Vertically Integrated, Three-Dimensional Nanowire Complementary Metal-Oxide-Semiconductor Circuits

III&#x2013;V 4D Transistors