Abstract:Engineering materials at the nanoscale by combining controlled nanomaterial synthesis and directed assembly methods offers the potential to create new electronic and optical devices with improved performance and functionality. Semiconductor nanowires have been of particular interest as a model system for studying new physical phenomena arising from their scaled geometries as well as for applications in high performance vertical transistors, thin film electronic, electro-optical, and sensing devices and circuits. However, the use of relatively immature nanowire growth, in-situ doping, and device integration processes have made it difficult to elucidate and compare the electrical transport properties across different device platforms (e.g., nanowire versus planar) and length scales. This talk will describe recent results showing that thermally-oxidized in-situ axially-doped n+-p--n+ and p+-n--p+ silicon nanowires (20 to 50 run in diameter) grown by the vapor-liquid-solid technique can be used to fabricate stable and reproducible n- and p-channel top-gate and wrap-around-gate field effect transistors (FETs) that operate by inversion ofthe channel and have both high on-state current (Ion) and on/off-state current ratio (Ion/Ioff). Control measurements using back-gated device structures that separately probe the properties of the heavily-doped source/drain regions and lightly-doped channel region confirm that radial thin film deposition on the channel is prevented during vapor-liquid-solid growth of the second heavily-doped nanowire segment, which is necessary for fabricating complementary field effect transistors using these silicon nanowires. The effective mobility estimated from the measured channel resistance of n+-p--n+ and p+-n--p+ silicon nanowire FETs having 1 ?m-long channels will be provided and related to planar devices. Finally, the properties of the top-gate and wrap-around-gate n- and p-channel silicon nanowire FETs will be compared as a function of global back gate bias.

Top-gated field effect devices using oxidized silicon nanowires

Oxidation of silicon nanowires for top-gated field effect transistors

In situ axially doped n-channel silicon nanowire field-effect transistors.

Axially-doped n+-p−-n+ and p+-n−-p+ silicon nanowires: vapor-liquid-solid growth and field effect transistor characterization

High-performance silicon nanowire field-effect transistor with silicided contacts

Si Nanowire - Array Source Gated Transistors

Silicon Nanowires, Catalytic Growth and Electrical Characterization

Inversion-mode Operation of Thermally-oxidized Modulation-doped Silicon Nanowire Field Effect Devices

Silicon Nanowire Synthesis by Chemical Vapor Deposition

Top-down Fabricated Silicon-Nanowire-based Field-Effect Transistor Device on a (111) Silicon Wafer.

Electrical Transport of Bottom-Up Grown Single-Crystal Si1−xGexnanowire

Dual gate controlled single electron effect in silicon nanowire transistors

Single Crystalline PtSi Nanowires, PtSi/Si/PtSi Nanowire Heterostructures, and Nanodevices

Nickel Salicided Source/Drain Extensions for Performance Improvement in Ultrascaled (sub 10 Nm) Si-Nanowire Transistors

Multiple Schottky Barrier-Limited Field-Effect Transistors on a Single Silicon Nanowire with an Intrinsic Doping Gradient

Nanowire FETs with Nearly Single-Crystalline Si Channels by NiSi2-Seed Initiated Lateral Epitaxial Crystallization (SILEC)

P-Type Conductivity In Silicon Nanowires Induced By Heterojunction Interface Charge Transfer

High-performance Fully Depleted Silicon Nanowire (diameter /spl Les/ 5 Nm) Gate-All-around CMOS Devices

Oxide-Confined Formation of Germanium Nanowire Heterostructures for High-Performance Transistors

P-N Crossed Nanojunctions from Electroless-Etched Si Nanowires

Performance Improvement of Planar Silicon Nanowire Field Effect Transistors Via Catalyst Atom Doping Control