Abstract:Engineering materials at the nanoscale by combining controlled nanomaterial synthesis and directed assembly methods offers the potential to create new electronic and optical devices with improved performance and functionality. Semiconductor nanowires have been of particular interest as a model system for studying new physical phenomena arising from their scaled geometries as well as for applications in high performance vertical transistors, thin film electronic, electro-optical, and sensing devices and circuits. However, the use of relatively immature nanowire growth, in-situ doping, and device integration processes have made it difficult to elucidate and compare the electrical transport properties across different device platforms (e.g., nanowire versus planar) and length scales. This talk will describe recent results showing that thermally-oxidized in-situ axially-doped n+-p--n+ and p+-n--p+ silicon nanowires (20 to 50 run in diameter) grown by the vapor-liquid-solid technique can be used to fabricate stable and reproducible n- and p-channel top-gate and wrap-around-gate field effect transistors (FETs) that operate by inversion ofthe channel and have both high on-state current (Ion) and on/off-state current ratio (Ion/Ioff). Control measurements using back-gated device structures that separately probe the properties of the heavily-doped source/drain regions and lightly-doped channel region confirm that radial thin film deposition on the channel is prevented during vapor-liquid-solid growth of the second heavily-doped nanowire segment, which is necessary for fabricating complementary field effect transistors using these silicon nanowires. The effective mobility estimated from the measured channel resistance of n+-p--n+ and p+-n--p+ silicon nanowire FETs having 1 ?m-long channels will be provided and related to planar devices. Finally, the properties of the top-gate and wrap-around-gate n- and p-channel silicon nanowire FETs will be compared as a function of global back gate bias.

Inversion-mode Operation of Thermally-oxidized Modulation-doped Silicon Nanowire Field Effect Devices

Axially-doped n+-p−-n+ and p+-n−-p+ silicon nanowires: vapor-liquid-solid growth and field effect transistor characterization

In situ axially doped n-channel silicon nanowire field-effect transistors.

Top-gated field effect devices using oxidized silicon nanowires

Vertical Silicon Nanowire CMOS Inverter

Oxidation of silicon nanowires for top-gated field effect transistors

Improved current saturation and shifted switching threshold voltage in In2O3 nanowire based, fully transparent NMOS inverters via femtosecond laser annealing

Mobility enhancement effect in heavily doped junctionless nanowire silicon-on-insulator metal-oxide-semiconductor field-effect transistors

Unexpected Phosphorus Doping Routine of Planar Silicon Nanowires for Integrating CMOS Logics.

Electrical properties of p- and n-type silicon nanowires

Performance Improvement of Planar Silicon Nanowire Field Effect Transistors Via Catalyst Atom Doping Control

In2O3 Nanowire Field-Effect Transistors with Sub-60 Mv/dec Subthreshold Swing Stemming from Negative Capacitance and Their Logic Applications.

Si-Nanowire Cmos Inverter Logic Fabricated Using Gate-All-Around (gaa) Devices and Top-Down Approach

Manipulating III–V Nanowire Transistor Performance via Surface Decoration of Metal‐Oxide Nanoparticles

Intrinsic and doped coupled quantum dots created by local modulation of implantation in a silicon nanowire

Significant Resistance Reduction in Modulation‐Doped Silicon Nanowires via Aluminum‐Induced Acceptor States in SiO2

Si Nanowire - Array Source Gated Transistors

Controllable P-N Switching Behaviors of Gaas Nanowires Via an Interface Effect

Multiple Schottky Barrier-Limited Field-Effect Transistors on a Single Silicon Nanowire with an Intrinsic Doping Gradient

Selective Operation of Enhancement and Depletion Modes of Nanoscale Field-Effect Transistors

Controllable Electrical Properties of Metal-Doped In2O3 Nanowires for High-Performance Enhancement-Mode Transistors.