Abstract:Engineering materials at the nanoscale by combining controlled nanomaterial synthesis and directed assembly methods offers the potential to create new electronic and optical devices with improved performance and functionality. Semiconductor nanowires have been of particular interest as a model system for studying new physical phenomena arising from their scaled geometries as well as for applications in high performance vertical transistors, thin film electronic, electro-optical, and sensing devices and circuits. However, the use of relatively immature nanowire growth, in-situ doping, and device integration processes have made it difficult to elucidate and compare the electrical transport properties across different device platforms (e.g., nanowire versus planar) and length scales. This talk will describe recent results showing that thermally-oxidized in-situ axially-doped n+-p--n+ and p+-n--p+ silicon nanowires (20 to 50 run in diameter) grown by the vapor-liquid-solid technique can be used to fabricate stable and reproducible n- and p-channel top-gate and wrap-around-gate field effect transistors (FETs) that operate by inversion ofthe channel and have both high on-state current (Ion) and on/off-state current ratio (Ion/Ioff). Control measurements using back-gated device structures that separately probe the properties of the heavily-doped source/drain regions and lightly-doped channel region confirm that radial thin film deposition on the channel is prevented during vapor-liquid-solid growth of the second heavily-doped nanowire segment, which is necessary for fabricating complementary field effect transistors using these silicon nanowires. The effective mobility estimated from the measured channel resistance of n+-p--n+ and p+-n--p+ silicon nanowire FETs having 1 ?m-long channels will be provided and related to planar devices. Finally, the properties of the top-gate and wrap-around-gate n- and p-channel silicon nanowire FETs will be compared as a function of global back gate bias.

Oxidation of silicon nanowires for top-gated field effect transistors

Top-gated field effect devices using oxidized silicon nanowires

In situ axially doped n-channel silicon nanowire field-effect transistors.

Axially-doped n+-p−-n+ and p+-n−-p+ silicon nanowires: vapor-liquid-solid growth and field effect transistor characterization

Inversion-mode Operation of Thermally-oxidized Modulation-doped Silicon Nanowire Field Effect Devices

Study on Thermal Oxidation of Si Nanowires

Nanotube and Nanowire Transistors

Study Of Dry Oxidation Of Triangle-Shaped Silicon Nanostructure

Geometry and Temperature Effects on the Threshold Voltage Characteristics of Silicon Nanowire MOS Transistors

Fabrication of Silicon Nano-Wire by Oxidation

Oxide-Confined Formation of Germanium Nanowire Heterostructures for High-Performance Transistors

Two-Dimensional Self-Limiting Oxidation for Non-Planar Silicon Nano-Devices from Top-Down Approach: Experiments and Modeling

TCAD modeling and simulation of self-limiting oxide growth and boron segregation during vertical silicon nanowire processing

High-performance silicon nanowire field-effect transistor with silicided contacts

Top-Down Fabrication of Shape Controllable Si Nanowires Based on Conventional Cmos Process

Oxidation Behavior of SiC Nanowires: A Nanowire Radius‐dependent Growth of Oxide Scale Thickness

Performance Improvement of Planar Silicon Nanowire Field Effect Transistors Via Catalyst Atom Doping Control

Synthesis and Fabrication of High‐Performance N‐type Silicon Nanowire Transistors

Dual gate controlled single electron effect in silicon nanowire transistors

Large-scale Synthesis of Silicon Nanowires by Thermal Evaporation of Silicon Monoxide and Controlled P-Type Doping

Oxidation of silicon nanowire can transport much more light into silicon substrate.