Abstract:Impurity doping in silicon (Si) ultra-large-scale integration is one of the key challenges which prevent further device miniaturization. Using ultraviolet photoelectron spectroscopy and X-ray absorption spectroscopy in the total fluorescence yield mode, we show that the lowest unoccupied and highest occupied electronic states of ≤3 nm thick SiO2-coated Si nanowells shift by up to 0.2 eV below the conduction band and ca. 0.7 eV below the valence band edge of bulk silicon, respectively. This nanoscale electronic structure shift induced by anions at surfaces (NESSIAS) provides the means for low-nanoscale intrinsic Si (i-Si) to be flooded by electrons from an external (bigger, metallic) reservoir, thereby getting highly electron- (n-) conductive. While our findings deviate from the behavior commonly believed to govern the properties of silicon nanowells, they are further confirmed by the fundamental energy gap as per nanowell thickness when compared against published experimental data. Supporting our findings further with hybrid density functional theory calculations, we show that other group IV semiconductors (diamond, Ge) do respond to the NESSIAS effect in accord with Si. We predict adequate nanowire cross-sections (X-sections) from experimental nanowell data with a recently established crystallographic analysis, paving the way to undoped ultrasmall silicon electronic devices with significantly reduced gate lengths, using complementary metal-oxide-semiconductor-compatible materials.

Two-Dimensional Self-Limiting Oxidation for Non-Planar Silicon Nano-Devices from Top-Down Approach: Experiments and Modeling

Two-Dimensional Self-Limiting Wet Oxidation of Silicon Nanowires: Experiments and Modeling

Two-dimensional modeling of the self-limiting oxidation in silicon and tungsten nanowires

Tuning the Outward to Inward Swelling in Lithiated Silicon Nanotubes Via Surface Oxide Coating

Fabrication of Silicon Nano-Wire by Oxidation

Abnormal oxidation in nickel silicide and nickel germanosilicide in sub-micro CMOS

TCAD modeling and simulation of self-limiting oxide growth and boron segregation during vertical silicon nanowire processing

Top-Down Fabrication of Shape Controllable Si Nanowires Based on Conventional Cmos Process

Understanding of the retarded oxidation effects in silicon nanostructures

Study Of Dry Oxidation Of Triangle-Shaped Silicon Nanostructure

Oxidation simulation study of silicon carbide nanowires: A carbon-rich interface state

Design and fabrication of a nanofluidic channel by selective thermal oxidation and etching back of silicon dioxide made on a silicon substrate

Non-uniaxial Stress-Assisted Fabrication of Nanoconstriction on Vertical Nanostructured Si.

New Design Concept for Stable Α-Silicon Nitride Based on the Initial Oxidation Evolution at the Atomic and Molecular Levels

Fabrication of Vertically Stacked Single-Crystalline Si Nanowires Using Self-Limiting Oxidation

A Novel Sulfide-Assisted Growth of Silicon Nano-Wires

Turning Low-Nanoscale Intrinsic Silicon Highly Electron-Conductive by SiO2 Coating

AN INTERFACE KINETICS STUDY OF OXIDATION PROCESS OF SILICON

Study on Thermal Oxidation of Si Nanowires

Controlled fabrication of Si nanocrystals embedded in thin SiON layers by PPECVD followed by oxidizing annealing

Si3N4 single-crystal nanowires grown from silicon micro and nanoparticles near the threshold of passive oxidation