Si3N4 single-crystal nanowires grown from silicon micro and nanoparticles near the threshold of passive oxidation

J. Farjas,C. Rath,A. Pinyol,P. Roura,E. Bertran
DOI: https://doi.org/10.48550/arXiv.0811.3575
2008-11-21
Materials Science
Abstract:A simple and most promising oxide-assisted catalyst-free method is used to prepare silicon nitride nanowires that give rise to high yield in a short time. After a brief analysis of the state of the art, we reveal the crucial role played by the oxygen partial pressure: when oxygen partial pressure is slightly below the threshold of passive oxidation, a high yield inhibiting the formation of any silica layer covering the nanowires occurs and thanks to the synthesis temperature one can control nanowire dimensions.
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