Abstract:Engineering materials at the nanoscale by combining controlled nanomaterial synthesis and directed assembly methods offers the potential to create new electronic and optical devices with improved performance and functionality. Semiconductor nanowires have been of particular interest as a model system for studying new physical phenomena arising from their scaled geometries as well as for applications in high performance vertical transistors, thin film electronic, electro-optical, and sensing devices and circuits. However, the use of relatively immature nanowire growth, in-situ doping, and device integration processes have made it difficult to elucidate and compare the electrical transport properties across different device platforms (e.g., nanowire versus planar) and length scales. This talk will describe recent results showing that thermally-oxidized in-situ axially-doped n+-p--n+ and p+-n--p+ silicon nanowires (20 to 50 run in diameter) grown by the vapor-liquid-solid technique can be used to fabricate stable and reproducible n- and p-channel top-gate and wrap-around-gate field effect transistors (FETs) that operate by inversion ofthe channel and have both high on-state current (Ion) and on/off-state current ratio (Ion/Ioff). Control measurements using back-gated device structures that separately probe the properties of the heavily-doped source/drain regions and lightly-doped channel region confirm that radial thin film deposition on the channel is prevented during vapor-liquid-solid growth of the second heavily-doped nanowire segment, which is necessary for fabricating complementary field effect transistors using these silicon nanowires. The effective mobility estimated from the measured channel resistance of n+-p--n+ and p+-n--p+ silicon nanowire FETs having 1 ?m-long channels will be provided and related to planar devices. Finally, the properties of the top-gate and wrap-around-gate n- and p-channel silicon nanowire FETs will be compared as a function of global back gate bias.

Electrical Transport of Bottom-Up Grown Single-Crystal Si1−xGexnanowire

Study on the Synthesis of High Quality Single Crystalline Si1−xGex Nanowire and Its Transport Properties

Synthesis And Transistor Performances Of High Quality Single Crystalline Vapor-Liquid-Solid Grown Si1-Xgex Nanowire

Top-gated field effect devices using oxidized silicon nanowires

Schottky-Barrier Si Nanowire MOSFET: Effects of Source/Drain Metals and Gate Dielectrics

New Observation On Gate-Induced Drain Leakage In Silicon Nanowire Transistors With Epi-Free Cmos Compatible Technology On Soi Substrate

Erbium silicided Schottky Source/Drain Silicon Nanowire N-Metal–Oxide–Semiconductor Field-Effect Transistors

High-performance silicon nanowire field-effect transistor with silicided contacts

Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs

Surface‐Dominated Transport Properties of Silicon Nanowires

Axially-doped n+-p−-n+ and p+-n−-p+ silicon nanowires: vapor-liquid-solid growth and field effect transistor characterization

Single Β-Ga2o3 Nanowire Back-Gate Field-Effect Transistor

Low-temperature epitaxial SiGe:P for gate-all-around n-channel metal-oxide-semiconductor devices

Si Doping-Induced Phase Control, Formation of P-Type and N-Type GaAs Nanowires

The dopant (n- and p-type), band gap, and size-dependent field electron emission induced from silicon nanowires

GaAs nanowires: from manipulation of defect formation to controllable electronic transport properties.

Performance Limit of Gate-All-Around Si Nanowire Field-Effect Transistors: an Ab Initio Quantum Transport Simulation

Silicon Nanowires, Catalytic Growth and Electrical Characterization

Demonstration of Schottky Barrier NMOS Transistors with Erbium Silicided Source/Drain and Silicon Nanowire Channel

Nanowire FETs with Nearly Single-Crystalline Si Channels by NiSi2-Seed Initiated Lateral Epitaxial Crystallization (SILEC)

Dual gate controlled single electron effect in silicon nanowire transistors