Self-organized Growth and Optical Emission of Silicon-Based Nanoscale Β-Sic Quantum Dots

XL Wu,Y Gu,SJ Xiong,JM Zhu,GS Huang,XM Bao,GG Siu

DOI: https://doi.org/10.1063/1.1609642

IF: 2.877

2003-01-01

Journal of Applied Physics

Abstract:Si-based β-SiC quantum dots (QDs) were fabricated for exploring efficient blue emission from β-SiC nanostructures. Microstructural observations and x-ray photoemission spectroscopy reveal that the β-SiC QDs with sizes of 5–7 nm are embedded in the SiO2 and graphite matrices, displaying a locally tetragonal symmetry. Photoluminescence spectral examinations show two narrow blue-emitting bands at 417 and 436 nm, which are determined by both quantum confinement and surface structure of the β-SiC QDs. Electron spin resonance investigation demonstrates that the photoexcited carriers partially come from the β-SiC QD core with a widened band gap, whereas the radiative recombination occurs in Si excess defect centers at the β-SiC QD surface. A theoretical calculation about electronic states caused by the vacancy defects in the gap of balls formed with excess Si atoms at the surfaces of the β-SiC QDs supports our assignment to the two blue-emitting origin.